A planar near-infrared photoelectric detector based on Tamm plasmas
A near-infrared light and electrical detector technology, applied in the field of photoelectric sensing, can solve the problem of low responsivity of photoelectric detectors, and achieve the effect of improving the absorption rate
Pending Publication Date: 2019-11-08
SUZHOU UNIV +1
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[0006] In order to solve the problem of low responsivity of photodetectors based on metal light absorption in the prior art, the present invention provides a planar near-infrared photodetector based on Tam plasma, which adopts the following technical scheme:
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[0025] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the following will clearly and completely describe the technical solutions of the embodiments of the present invention in conjunction with the drawings of the embodiments of the present invention. Apparently, the described embodiments are some, not all, embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention belong to the protection scope of the present invention.
[0026] The technical solution of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0027] Such as Figure 1-2 As shown, a planar near-infrared photodetector based on Tam plasmon, including a silicon dioxide substrate 1, a Bragg reflector 2 and a metal thin film 3;
[0028] Specifically, the Bragg reflector 2 and the metal film...
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The invention provides a planar near-infrared photoelectric detector based on Tamm plasmas. The planar near-infrared photoelectric detector comprises a silicon dioxide substrate, a Bragg reflector anda metal film. The Bragg reflector and the metal film are sequentially disposed on the silicon dioxide substrate. The Bragg reflector is formed by high-refractive-index thin film layers and low-refractive-index thin film layers, which are arranged alternately from the top to bottom. The contact surface between the Bragg reflector and the metal thin film is the high-refractive-index thin film layer, which is titanium dioxide; the top portion of the metal thin film is provided with a top conductive electrode; and the bottom portion of the high-refractive-index film layer on the top layer is provided with a grid-shaped bottom conductive electrode. The planar near-infrared photoelectric detector improves photon absorption rate, hot electron transport efficiency and responsivity of the photoelectric detector; by adjusting the thickness of the titanium dioxide which is adjacent to the metal film, response wavelength of the detector can be changed and multi-narrowband photoelectric detectioncan be realized; and the planar near-infrared photoelectric detector is simple in structure and convenient to produce.
Description
technical field [0001] The invention relates to the technical field of photoelectric sensing, in particular to a planar near-infrared photodetector based on Tam plasma. Background technique [0002] Photodetectors based on PN junctions (or PIN junctions, or heterojunctions) use the formed built-in electric field to collect the photogenerated carriers generated by the semiconductor layer excited by light. However, the selected semiconductor is transparent to the electromagnetic waveband with energy lower than its bandgap, so the detector constructed with this semiconductor cannot detect the waveband with energy lower than its bandgap. Unlike optoelectronic devices based on semiconductor light absorption, thermionic photodetectors can break through the semiconductor band gap limit, and the hot electrons (holes) generated by the light absorption of metal thin films can directly enter the semiconductor conduction band (valence band) through interface charge transfer. macro curr...
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IPC IPC(8): H01L31/0232H01L31/108
CPCH01L31/108H01L31/02327
Inventor 张程吴绍龙刘鉴辉刘慧敏俞童
Owner SUZHOU UNIV