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Reaction chambers and semiconductor equipment

A reaction chamber and cavity technology, applied in metal material coating process, coating, gaseous chemical plating and other directions, can solve the problems of reaction by-product exhaust speed, etc., to avoid unbalanced airflow field and improve film formation quality, the effect of reducing the generation of particles

Active Publication Date: 2021-09-17
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to propose a reaction chamber to overcome the problems that reaction by-products are easily formed on the inner wall of the existing reaction chamber and the exhaust speed is relatively slow

Method used

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  • Reaction chambers and semiconductor equipment
  • Reaction chambers and semiconductor equipment

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Embodiment

[0045] figure 1 showing a cross-sectional view of a reaction chamber according to an exemplary embodiment of the present invention, figure 2 show figure 1 Cutaway view of section A-A in Middle. like figure 1 and figure 2 As shown, the reaction chamber according to an exemplary embodiment of the present invention includes a cavity 10 and a first liner 5 disposed in the cavity 10, and a top wall of the first liner 5 and the top wall of the cavity 10 is provided gap, the bottom wall of the cavity 10 is provided with an exhaust port 7 and a first air inlet 11, the first inner liner 5 is in the shape of a square tube, and the distance T between the first inner liner 5 and the central axis of the cavity is greater than that of the exhaust port 7 The distance L2 from the central axis of the cavity is less than the distance L1 from the first air inlet 11 to the central axis of the cavity, and the exhaust port 7 communicates with the first air inlet 11 through the air channel 2 ....

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Abstract

A reaction chamber and semiconductor equipment. The reaction chamber comprises a cavity (10) and a first liner (5) located in the cavity (10), and the bottom wall of the cavity (10) is provided with an exhaust port (7) and a first air inlet ( 11), the first lining (5) is cylindrical, the distance between the first lining (5) and the central axis of the cavity is greater than the distance between the exhaust port (7) and the central axis of the cavity, and smaller than the first air inlet (11) The distance from the central axis of the cavity, the exhaust port (7) communicates with the first air inlet (11) through the air channel (2). The inner wall of the reaction chamber is not easy to form reaction by-products, and the film-forming quality is high.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to a reaction chamber and semiconductor equipment including the reaction chamber. Background technique [0002] Titanium nitride (TiN) thin film has become a multipurpose material in the IC field due to its good electrical conductivity, good thermal stability and excellent mechanical properties. For example, as a diffusion barrier layer to prevent tungsten from diffusing into the oxide layer and silicon substrate, as an adhesion layer to make tungsten adhere to the silicon oxide surface, as an anti-reflection coating layer (ARC) to improve lithography resolution, in HKMG (High-K Metal- Gate) MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) process, TiN is used for the metal gate electrode, and in the low-k dielectric dual damascene etching process, it is used as a metal hard mask to protect the OSG film, etc. [0003] The physical vapor deposition (PVD...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455C23C16/34
CPCC23C16/34C23C16/4408C23C16/45525
Inventor 秦海丰史小平李春雷纪红赵雷超张文强
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD