Thin film transistor, manufacturing method thereof, and display device
A thin-film transistor and active layer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as far from reaching 150Ω, reduce power consumption, increase effective contact area, and reduce contact resistance. Effect
Active Publication Date: 2022-04-15
BOE TECH GRP CO LTD +1
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Problems solved by technology
[0004] But the current technology can only reduce the contact resistance to about 2000Ω, which is far from the required value of 150Ω
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[0045] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.
[0046] The inventors of the present application found that the contact resistance of the thin film transistors prepared by the existing technology is far from the required value, mainly due to the poor uniformity of film formation, doping uniformity and etching uniformity of the existing technology. Specifically, due to poor film formation uniformity, doping uniformity, and etching uniformity, etc., the effectively doped ions are etched away during the etching process, thus greatly reducing the conduct...
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Abstract
The invention provides a thin film transistor, a manufacturing method thereof and a display device. The preparation method of the thin film transistor includes: forming an active layer and an insulating layer covering the active layer on a substrate, forming a via hole exposing the active layer on the insulating layer; The layer is subjected to ion implantation treatment to form a doped region in the hole; a metal layer is formed on the insulating layer, and the metal layer is connected to the doped region in the hole through the via hole. In the present invention, ion implantation is performed after the via hole is formed to form a doped area in the via hole, which ensures that the metal layer is in contact with the effective doped area of the active layer in the via hole, not only forming an ohmic contact, but also making the contact The resistance is greatly reduced, the effective contact area is increased, the contact resistance is further reduced, the contact resistance can be reduced to a required value, and the power consumption of the thin film transistor is effectively reduced.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, and a display device. Background technique [0002] Thin Film Transistor (Thin Film Transistor, TFT) is a very important element in the field of display technology, and plays a very important role in Liquid Crystal Display (Liquid Crystal Display, LCD) and Organic Light Emitting Diode (OLED). As the size of the screen becomes larger and the display quality is gradually improved, the number of thin film transistors in the display device is increasing, and the power consumption of the thin film transistors is increasing. Therefore, only by reducing the power consumption of the thin film transistors can the power consumption of the display device be reduced. [0003] For thin film transistors, the contact resistance between the metal layer and the metal layer is small, but the contact resistance between the metal layer and th...
Claims
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IPC IPC(8): H01L21/28H01L29/417
CPCH01L29/4175H01L21/28
Inventor 张震魏悦杨玉清吴欣慰安旭东
Owner BOE TECH GRP CO LTD