Solid-state imaging device

Abstract

An imaging device includes a first chip. The first chip includes first and second pixels including respective first and second photoelectric conversion regions that convert incident light into electric charge. The first chip includes a first connection region for bonding the first chip to a second chip and including a first connection portion overlapped with the first photoelectric conversion region in a plan view, and a second connection portion overlapped with the second photoelectric conversion region in the plan view. The first photoelectric region receives incident light of a first wavelength, and the second photoelectric conversion region receives incident light of a second wavelength that is greater than the first wavelength. The first connection portion overlaps an area of the first photoelectric conversion region that is larger than an area of the second photoelectric conversion region overlapped by the second connection portion.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of a prior Japanese patent application JP2017-078701 filed on April 12, 2017, the entire contents of which are hereby incorporated by reference. technical field [0003] The present technology relates to a solid-state imaging element, and more particularly, to a technology for a solid-state imaging element constituted by electrically bonding respective electrodes of a plurality of semiconductor chips. Background technique [0004] In the past, when semiconductor elements composed of semiconductor members were bonded to manufacture 3D integrated circuits, solid-state imaging elements, etc., a method for directly bonding Cu electrodes provided on the bonding surfaces between semiconductor elements was used, and the bonded Cu The electrodes serve as wiring. As an exemplary solid-state imaging element manufactured in this way, Patent Document 1 discloses a solid-state imaging element in...

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Problems solved by technology

Incidentally, in the case where the coverage of the Cu electrode with respect to the joint surface between the semiconductor substrates is low in the solid-state imaging element according to Patent Document 1, the flatness of the joint surface may deteriorate, and the joint surface between the semiconductor substrates may deteriorate. fit may be insufficient

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