Single-chip LED photoelectric coupler and integrated circuit and manufacturing method thereof
A photoelectric coupler and LED light source technology, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of high production cost, difficult dispensing and spot welding process, and increased production difficulty
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Embodiment 1
[0067] Embodiment 1 A single-chip LED optocoupler
[0068] Such as figure 1 As shown, this embodiment includes a silicon photodetector, a first dielectric layer 8 and an LED light source arranged axially stacked from bottom to top. Wherein, the silicon photodetector is manufactured in the first substrate 1 by using the complementary metal oxide semiconductor process, and the first substrate 1 is an i-type silicon substrate, and the i-type is n - lightly doped. The silicon photodetector is a pin photodiode, an avalanche photodiode, a phototransistor or other silicon photodetectors.
[0069] The silicon photodetector of this embodiment is described by taking a pin photodiode as an example, as figure 1 As shown, the first substrate 1 is implanted with a first deep P well 2 and a first high aspect ratio P well 3 and a second high aspect ratio P well 4 connected to the first deep P well 2, the first deep P well 2. The first high aspect ratio P well 3 and the second high aspect ...
Embodiment 2
[0074] Embodiment 2 A manufacturing method of a single-chip LED optocoupler
[0075] This embodiment is used to make embodiment 1, and proceeds according to the following steps:
[0076] One, use n - The doped silicon wafer is used as the first substrate 1. Using the ion implantation process, the first deep P well 2, the first high aspect ratio P well 3, and the second high aspect ratio P well are sequentially completed on the first substrate 1. Fabrication of the well 4, forming the first island, and then completing the first thin n on the top of the first island + The making of well 5;
[0077] 2. Using low-pressure chemical vapor deposition to grow SiO with a thickness of 300nm~500nm on the first substrate 1 2 The isolation dielectric layer is used as the first dielectric layer 8 to play the role of electrical isolation;
[0078] 3. A layer of Al with a thickness of 10nm to 50nm is grown on the first dielectric layer 8 by atomic layer deposition 2 o 3 Buffer 9;
[00...
Embodiment 3
[0087] Embodiment 3 An integrated circuit of a single-chip LED optocoupler
[0088] Such as figure 2 As shown, this embodiment includes a single-chip LED optocoupler and a back-end circuit integrated on the second substrate 17 .
[0089] The second substrate 17 is n － type silicon substrate; the second deep P well 18 formed by the ion implantation process in the second substrate 17 and the first high aspect ratio P well 18 connected to the second deep P well 18 ＋ well 19 and a second high aspect ratio P ＋ well 20, a second deep P-well 18 with a first high aspect ratio P ＋ Well 19, the second high aspect ratio P ＋ The wells 20 are connected to form a first large island and a second large island. The back-end circuit is located on the first largest island, and the single-chip LED optocoupler is located on the second largest island.
[0090] The first large island is implanted with a third deep P well 21 and third to seventh high aspect ratio P wells 22 to 26 connected to ...
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