Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for plasma etching assisted laser processing of silicon carbide

A plasma and auxiliary laser technology, which is applied in gaseous chemical plating, metal material coating process, and process for producing decorative surface effects, etc. It can solve the problems of limited development, low etching rate, and difficulty in etching processing. , to achieve the effect of improving efficiency, efficient removal, and reducing manufacturing costs

Pending Publication Date: 2019-12-03
XI AN JIAOTONG UNIV
View PDF6 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned material advantages of semiconductor silicon carbide also bring great challenges to its use as a MEMS sensor substrate material, mainly reflected in the difficulty of etching processing
For a long time, with the help of the etching process transplanted from silicon-based MEMS, the plasma etching of silicon carbide has been basically realized through the optimization of processing parameters, but the low etching rate has always limited the further development of silicon carbide-based high-temperature sensors. Afterwards, another study proposed the use of picosecond lasers to process silicon carbide, but the processing results and surface quality need to be improved.
Therefore, the current high-efficiency and high-quality material removal process for SiC is still in the exploratory stage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for plasma etching assisted laser processing of silicon carbide
  • Method for plasma etching assisted laser processing of silicon carbide
  • Method for plasma etching assisted laser processing of silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1. In this embodiment, the laser used is a titanium: sapphire laser, and the processed holes are all square, with a side length of 800 μm and different hole depths, mainly depending on the processing power and the number of scanning layers.

[0025] refer to figure 1 , a method for plasma etching assisted laser processing silicon carbide, comprising the following steps:

[0026] Step 1, cleaning: Take a 4-inch N-type conductive 4H-SiC wafer with a thickness of 340 μm and an off-axis of 4.0°±0.5° relative to the crystal direction, and cut it into small samples of 1.5cm×1cm for later use , soak one of the samples successively in acetone and absolute ethanol solutions, ultrasonically clean for 20 minutes, remove surface impurities and pollutants, and dry;

[0027] Step 2, processing square holes by femtosecond laser irradiation: paste the four corners of the sample with ordinary scotch tape, and fix it on a clean ground glass to prevent the sample from moving ...

Embodiment 2

[0032] Embodiment 2, the laser used in this embodiment is a titanium: sapphire laser, and the processed holes are all round holes with a side length and diameter of 800 μm, and the hole depths are different, mainly depending on the processing power and the number of scanning layers.

[0033] refer to figure 1 , a method for plasma etching assisted laser processing silicon carbide, comprising the following steps:

[0034] Step 1, cleaning: Take a 4-inch N-type semi-insulating 4H-SiC wafer with a thickness of 500μm and a crystal orientation , and cut it into small samples of 1.5cm×1cm for later use. Soak in anhydrous ethanol solution, ultrasonically clean for 30 minutes, remove surface impurities and pollutants, and dry;

[0035] Step 2, femtosecond laser irradiation processing round hole: Paste the four corners of the sample with ordinary scotch tape, and fix it on a clean ground glass to prevent the sample from moving during laser irradiation processing; place the ground glas...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for plasma etching assisted laser processing of silicon carbide, which comprises the following steps: carrying out rough processing and rapid removal on silicon carbide by using the irradiation ablation action of femtosecond laser on a material, removing impurities on the processed surface by using a mixed solution of hydrofluoric acid and nitric acid, and carrying out plasma etching fine processing to obtain an expected micro-nano structure. The method realizes high-efficiency high-quality material removal etching of silicon carbide, and has the advantages ofhigh processing efficiency, low cost, good processed surface quality and the like.

Description

technical field [0001] The invention belongs to the technical field of MEMS (micro-electromechanical systems) micro-nano processing, and in particular relates to a method for plasma etching-assisted laser processing of silicon carbide. Background technique [0002] High temperature resistant pressure sensors have broad application prospects in the field of national defense and military industry, such as pressure measurement in various engine cavities, pressure measurement of jet engines, rockets, missiles, satellites and other heat-resistant cavities and surface parts, especially in weapon systems , High temperature pressure sensor is indispensable for power system. However, most of the MEMS pressure sensors currently used are silicon-based or silicon-on-insulator (SOI)-based. In the pressure measurement of high temperature and harsh environments exceeding 600 ° C, indirect measurement is often achieved by using a pressure tube or adding a water-cooled jacket to the sensor. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C1/00531B81C1/00539B81C1/00849B81C1/00388
Inventor 方续东吴晨蒋庄德前田龙太郎
Owner XI AN JIAOTONG UNIV