A method for precise positioning of wafer maximum processing damage

Abstract

The invention discloses a precise positioning method for the maximum processing damage of a wafer. A film layer for auxiliary measurement is deposited on the non-processing surface of the wafer. The non-processing surface and the processing surface are arranged parallel to each other and facing away from each other. The non-processing surface is Smooth and non-destructive surface; at least one thinning operation is performed on the processing surface of the wafer, and before and after each thinning processing operation, the incident light of the ellipsometer scans the film on the non-processing surface at a set incident angle layer, the incident light is reflected and refracted in the thin film layer and the wafer, and the ellipsometric signal emitted by the ellipsometer detector is received by the ellipsometer detector. Once the ellipsometric signal detected on the auxiliary measurement thin film layer of the wafer changes, the The position corresponding to the change of ellipsometric signal is the position of maximum processing damage. It has the following advantages: realize the global, non-destructive, fast and accurate positioning of the maximum processing damage position on the wafer, track the processing status of the wafer in real time, and have important guiding significance for the selection and optimization of the actual wafer processing technology.

Description

technical field [0001] The invention relates to the technical field of wafer subsurface damage detection, in particular to a method for precisely locating the maximum processing damage of a wafer. Background technique [0002] The subsurface damage of the wafer includes metamorphic layers, dislocations, and cracks; the maximum processing damage of the wafer refers to the three defects of metamorphic layers, dislocations, and cracks left on the subsurface of the wafer processing surface after a certain processing procedure. The total thickness in the direction perpendicular to the machined surface. From the beginning of processing to the completion of wafer processing, it often requires the cooperation of multiple processing processes to complete, and the material removal efficiency of the latter process is usually lower than that of the previous process; when the subsequent process is performed after a process is completed, the latter process requires Remove all the damage ...

AI Technical Summary

Problems solved by technology

At the same time, the damage detection method of subsurface damage layer thickness also includes destructive detection means, such as "a method for evaluating the thickness of material subsurface damage layer" (authorized announcement number CN104458463B) proposes a method based on indentation The method of the test, and the "measurement method for the thickness of the subsurface damage layer of hard and brittle optical materials" (authorized announcement number CN 101672625 B) patent proposes a subsurface damage layer detection method based on the sectioning method; the above is for material subsurface damage Quantitative detection techniques are all local sampling of the processed material for detection, the thickness of the sub-surface damage layer obtained by it cannot reflect the overall damage of the processed material, let alone obtain the maximum processing damage of the processed material in a certain process

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