Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for measuring purity of MO source by using gas chromatograph

A gas chromatograph and purity technology, applied in the field of purity determination of metal-inorganic compounds, can solve problems such as the risk of spontaneous combustion of samples, slow processing and determination processes, and achieve the effects of short sample preparation time, shortened detection time, and reduced risk

Inactive Publication Date: 2019-12-13
苏州普耀光电材料有限公司
View PDF10 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The processing and determination process of this method is slow, and there is a risk of sample spontaneous combustion during the processing and determination process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The preferred embodiments of the present invention are described in detail below, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, and the protection scope of the present invention can be more clearly defined.

[0017] A kind of method that utilizes gas chromatograph to measure MO source purity, comprises the following steps:

[0018] (1) Under the protection of nitrogen gas, take the MO source to be tested, put it into the sample bottle, then take the NMP solution and add it to the above-mentioned sample bottle, fully shake, so that the MO source and the NMP solution are completely soluble in each other, and the sample NMP solution is obtained;

[0019] (2) Place the sampling system in an inert glove box;

[0020] (3) Using the sampling system and using hydrogen as the carrier gas, the sample NMP solution was injected into the gas chromatograph, and the gas chromatograph used a silicone oil stationa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for measuring the purity of an MO source by using a gas chromatograph. The method comprises the following steps that: (1) under the protection of inert gas, a to-be-measured MO source is taken and is put into a sample bottle, then an NMP solution is taken and added into the sample bottle, and the sample bottle is fully oscillated, so that the MO source and the NMPsolution can be completely dissolved with each other, and a sample NMP solution can be obtained; (2) a sample injection system is arranged in an inert glove box; (3) the sample NMP solution is injected into the gas chromatograph through the sample injection system with hydrogen adopted as a carrier gas, and the gas chromatograph adopts a silicone oil stationary liquid chromatographic column; and (4) the purity of the MO source is determined through a peak area normalization method according to a chromatogram obtained by the gas chromatograph. With the method provided by the invention adopted,the detection time of the MO source can be effectively shortened; detection precision can be improved; and risks in a sample treatment process can be decreased. The method is relatively safe and reliable.

Description

technical field [0001] The invention relates to the technical field of purity determination of metal-inorganic compounds, in particular to a method for determining the purity of an MO source by using a gas chromatograph. Background technique [0002] MO source is high-purity metal-inorganic compound, or compound semiconductor microstructure material. It is a supporting material for the growth of semiconductor microstructure materials by advanced metal-inorganic chemical vapor deposition (MOCVD) and other technologies. Its excellent electrical, optical and magnetic properties, etc. performance that pushes semiconductors and integrated circuits to higher frequencies. In my country, MO sources have been widely used in LED, solar cells, aerospace technology and other fields. [0003] The MO source cannot be directly dissolved in an acid solution due to its flammable and spontaneous combustion characteristics. The determination of the purity of the MO source in the prior art is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N30/02G01N30/06G01N30/60
CPCG01N30/02G01N30/06G01N30/6052
Inventor 顾宏伟茅嘉原洪海燕於婷婷周俊臣
Owner 苏州普耀光电材料有限公司