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A semiconductor light emitting element

A light-emitting element and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as sputtering of metal remelt, leakage of light-emitting layer, and decrease in light brightness, so as to reduce area, increase area ratio, and reduce leakage the effect of the phenomenon

Active Publication Date: 2019-12-13
TIANJIN SANAN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, after laser slicing, a large amount of metal remelt will be sputtered to the side wall of the light-emitting layer, which will easily cause leakage of the light-emitting layer and decrease in brightness when the light is absorbed by the remelt.

Method used

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  • A semiconductor light emitting element
  • A semiconductor light emitting element
  • A semiconductor light emitting element

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Embodiment Construction

[0040] see Figure 1~Figure 5 , It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, so that only the components related to the present invention are shown in the diagrams rather than the number and shape of components in actual implementation and size drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complex.

[0041] As shown in Figure (1), the manufacturing process of the light-emitting element of the present invention includes the following steps, (1) Obtain the following light-emitting structure before cutting, as shown in the figure: it includes a bonded substrate, and the back side of the bonded substrate has a back surface Metal electrode 1, the front side includes multi-layer metal layers from bottom to top, and the multi-layer metal layer specifically includes a me...

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Abstract

A semiconductor light emitting element includes a bonding substrate, the bonding substrate of the semiconductor light emitting element including a first surface and a second surface, a plurality of metal layers on the first surface, a semiconductor light emitting sequence on the plurality of metal layers, and an edge of the bonding substrate forming a stepped structure such that an edge portion ofthe first surface of the bonding substrate is uncovered.

Description

technical field [0001] The invention relates to a semiconductor light-emitting element, specifically designing an LED chip structure. Background technique [0002] In recent years, in order to obtain LED structures with higher brightness, high power or high thermal radiation rate, the traditional LED epitaxial structure is transferred to a transfer substrate with a metal reflective layer or a metal bonding layer, through chemical wet etching or laser lift-off way to remove the original substrate. For this type of structure, the epitaxial structure on the metal reflective layer and or the metal bonding layer is first etched to form a dicing line, and then a single chip structure is separated through the dicing line by blade scribing or laser scribing. However, the blade dicing There are technical problems such as wide cutting lanes and chip cracking caused by cutting. However, laser scribing has the advantages of flat cutting section and relatively narrow cutting lanes, so i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/20H01L33/005H01L33/0095H01L33/0093H01L33/30H01L33/62H01L2933/0066
Inventor 柯韦帆吴俊毅钟秉宪
Owner TIANJIN SANAN OPTOELECTRONICS