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Preparation technology of flexible transparent conductive film

A technology of transparent conductive film and preparation process, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, circuits, etc., and can solve problems such as limiting the application in the field of flexible electronics, complex and unfavorable photolithography technology, etc.

Active Publication Date: 2019-12-20
厦门派恩杰科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of a large number of bonding points between metal nanowires makes the resistance of the conductive film larger, which limits its further application in the field of flexible electronics
At present, most metal nanogrids are prepared by photolithography technology and coating technology. The photolithography technology is complex and costly, which is not conducive to large-area roll-to-roll production.

Method used

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  • Preparation technology of flexible transparent conductive film
  • Preparation technology of flexible transparent conductive film
  • Preparation technology of flexible transparent conductive film

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preparation example Construction

[0029] The invention provides a preparation process of a flexible transparent conductive film, and the specific steps of the preparation process include:

[0030] (1) Colloidal solution is evenly coated on the substrate to form a colloidal layer;

[0031] (2) cutting the colloidal layer to form a grid morphology;

[0032] (3) drying the colloidal layer after cutting to make it dry and crack to produce micron-scale crack templates;

[0033] (4) depositing metal on the colloidal layer gained in step (3);

[0034] (5) removing the colloid from the film obtained in step (4) to obtain a flexible transparent conductive film;

[0035] Specifically, in step (2), the depth of cutting the colloidal layer is equal to the thickness of the coated colloidal layer, through the design of the cutting depth equal to the thickness of the colloidal layer, the purpose of cutting through the colloidal layer is realized, so as to realize the subsequent metal deposition process , the metal deposit...

Embodiment 1

[0049] The first embodiment of the present invention provides a preparation process of a flexible transparent conductive film, and the specific steps of the preparation process include:

[0050] (1) Cut a polyethylene terephthalate (PET) film (light transmittance ~ 95%) with a thickness of 100 μm into a rectangular piece of 50cm*60cm, wash it with deionized water and absolute ethanol for 30min, respectively, Dry and use as a base. Prepare TiO with a concentration of 5% 2 weak. TiO with a thickness of 1 μm was sprayed 2 The colloidal solution is evenly applied to the surface of the PET substrate;

[0051] (2) The grid is processed on the colloidal layer by laser cutting colloidal film technology, and the shape of the grid is controlled by computer to be a triangular grid. The processing line spacing is 700 μm, the line width is 100 μm, and the cutting speed of the laser cutting machine is 80mm / s;

[0052] (3) Place the cut colloid film at an air pressure of 1*10 -3 Pa, dry...

Embodiment 2

[0056] The steps of the second embodiment are roughly the same as those of the first embodiment. The difference is that in this embodiment, in step (2), the grid is processed on the colloidal layer by laser cutting colloidal film technology, and the grid shape is a rectangular grid. .

[0057] Embodiment 2 of the present invention provides the same implementation principles and technical effects as Embodiment 1. For brief description, for details not mentioned in this embodiment, reference may be made to the corresponding content in Embodiment 1.

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Abstract

The invention provides a preparation technology of a flexible transparent conductive film and relates to the technical field of electronic devices. The preparation technology comprises the steps of firstly cutting through a colloid layer on the colloid layer to obtain mesoscale cracks through a colloid film laser cutting technology according to the mesh shapes, such as a triangle, a rectangle anda hexagon and then drying up a colloidal solution on a substrate to generate microscale cracks; depositing metal into the microscale cracks and the mesoscale cracks on the colloid layer with generatedmicroscale cracks and mesoscale cracks through a magnetron sputtering technology and removing colloid on the substrate; and finally obtaining the conductive film with the substrate and a composite metal mesh covering the substrate. The prepared conductive film is good in conductivity and can achieve an almost unchanged resistance value after being bent for multiple times; the production process has the advantages of being innocuous, harmless, low in cost and simple in operation; mass production can be implemented; and the produced flexible transparent conductive film can replace a traditionalITO conductive film and is applied to the field of electronic devices, such as a light-emitting electronic device and a touch screen panel.

Description

technical field [0001] The invention relates to the field of electronic device manufacturing, in particular to a preparation process of a flexible transparent conductive film. Background technique [0002] Transparent conductive electrodes with excellent mechanical flexibility will become an important component of next-generation wearable optoelectronic devices, occupying an increasingly important position in the fields of light-emitting devices, photovoltaic cells, touch screen panels, etc. Tin-doped indium oxide (ITO) has become the most widely used transparent conductive film material in academia and industry due to its optical transparency, thermal and chemical stability, device compatibility, and well-developed fabrication process. [0003] Although the preparation of ITO plastic films has been achieved, its application in various wearable optoelectronic devices is still limited due to the brittle nature of ITO. In addition, the high cost of indium element also makes t...

Claims

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Application Information

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IPC IPC(8): H01B13/00
CPCH01B13/00H01B13/0026
Inventor 许清池苏秋聪王金贵郭季丰
Owner 厦门派恩杰科技有限公司