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Electromigration reliability test structure and electromigration reliability test method

A technology of test structure and test method, which is applied in the direction of semiconductor/solid-state device test/measurement, circuit, electrical components, etc., and can solve problems such as difficulty in capturing changes in test line resistance

Active Publication Date: 2019-12-27
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] This application provides an electromigration reliability test structure and an electromigration reliability test method, which can solve the problem that the electromigration reliability test structure provided in the related art is difficult to capture the change of test line resistance

Method used

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  • Electromigration reliability test structure and electromigration reliability test method
  • Electromigration reliability test structure and electromigration reliability test method
  • Electromigration reliability test structure and electromigration reliability test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] refer to figure 2 , the electromigration reliability test structure 200 provided in this embodiment includes:

[0047]A test line 210, the test line 210 is an interconnection line in the integrated circuit.

[0048] The first through hole 221 , the first end of the first through hole 221 is connected to the first end of the test line 210 .

[0049] The first lead 231, the first lead 231 is connected to the second end of the first through hole 221 and the first current line 241, the connection position of the first lead 231 and the second end of the first through hole 221 and at least one pair of voltage sensing Line 250 is connected. It should be noted, figure 2 A pair of voltage sensing wires is used as an example for illustration. In an actual structure, more than one pair of voltage sensing wires may be provided at the connection position between the first lead wire 231 and the second end of the first through hole 221 .

[0050] Optionally, the connection posit...

Embodiment 2

[0055] Referring to Embodiment 1, the difference between Embodiment 2 and Embodiment 2 is that: the connection position of the test line 210 and the first end of the first through hole 221 is also connected to at least one pair of voltage sensing lines, and the test line 210 and the second through hole The connection position of the first end of the hole 222 is also connected with at least one voltage sensing line 250 .

[0056] Exemplary, such as figure 2 As shown, the connection position of the test line 210 and the first end of the first through hole 221 is connected with a pair of voltage sensing lines 250 . It should be noted, figure 2 A pair of voltage sensing wires is used as an example for illustration. In an actual structure, more than one pair of voltage sensing wires may be provided at the connection position between the test wire 210 and the first end of the first through hole 221 .

[0057] Optionally, the connection position of the test line 210 and the first...

Embodiment 3

[0060] Referring to Embodiment 1 and Embodiment 2, the difference between Embodiment 3 and Embodiment 1 and Embodiment 2 is that: the connection position of the second lead wire 232 and the second end of the second through hole 222 is also connected to at least one pair of voltage sensing lines .

[0061] Optionally, the connection position of the second lead 232 and the second end of the second through hole 222 is connected to at least two pairs of voltage sensing lines; An alternative to "the connection position is connected to at least one pair of voltage sensing lines": the second end of the second through hole 222 is connected to at least one pair of voltage sensing lines.

[0062] In this embodiment, by connecting at least one pair of voltage senses near the lower layer of the second through hole (the connection position between the second lead 232 and the second end of the second through hole 222, or, the second end of the second through hole 222) The test line further...

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Abstract

The invention discloses an electromigration reliability test structure and an electromigration reliability test method. The test structure comprises a test line, a first through hole, a first end, a second through hole and a second lead; the test line is an interconnection line in an integrated circuit; the first end of the first through hole is connected with the first end of the test line; the first lead is connected with the second end of the first through hole and a first current line; the connection position of the first lead and the second end of the first through hole is connected withat least one pair of voltage sensing lines; the first end of the second through hole is connected with the second end of the test line; and the second lead is connected with the second end of the second through hole and a second current line; and the connection position of the second lead and the second end of the second through hole is connected with at least one voltage sensing line. According to the electromigration reliability test structure and the electromigration reliability test method of the invention, the at least one pair of voltage sensing lines is connected near the through hole,so that the probability of capturing the resistance change of the test line can be increased, and the accuracy of an electromigration reliability test is improved; and meanwhile, when the more than one pair of voltage sensing line is arranged near the through hole, the probability of capturing the resistance change of the test line can be increased.

Description

technical field [0001] The present application relates to the technical field of reliability evaluation in the field of semiconductor manufacturing, and in particular to an electromigration reliability testing structure and an electromigration reliability testing method. Background technique [0002] The electromigration phenomenon refers to the phenomenon that when the integrated circuit in the semiconductor device is working, there is a current passing through the metal wire, and the metal ion generates material transport under the action of the current. As a result, some parts of the metal line will have voids due to the electromigration phenomenon, thereby causing an open circuit, and some parts will have hillocks due to the electromigration phenomenon, thereby causing a circuit short circuit. [0003] In the stage of integrated circuit process development, reliability evaluation is an important part of the successful evaluation of process development, and the electromig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/32H01L22/14
Inventor 马琼曹巍陈雷刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP