Novel growth method of high-stability conjugated polymer spherulite for organic laser
A technology of conjugated polymers and growth methods, applied in the direction of the structure of the active region, can solve the problems of poor stability of organic materials and the inability to realize electric pumping, etc., and achieve long service life, stable and controllable shape, Good photothermal stability
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example 1
[0031] Example 1: Growth of PTEDPF spherulites.
[0032] In an incubator with an ambient temperature of 40°C and a humidity of 35%, take an appropriate amount of tetrahydrofuran and pour it into an airtight container, so as to ensure that there is still some left after the solvent evaporates and fills the airtight container. A 1cm×1cm silicon wafer was selected as the substrate, and the silicon wafer was cleaned with dichloromethane, acetone, and ethanol in sequence in advance and ultrasonically cleaned. After drying, the substrate was cleaned with an oxygen plasma cleaner for 6 minutes. After the silicon wafer is cleaned, it is heated on a heating stage at 100°C for 3 minutes, and then placed on a stage in a closed container. Dissolve PTEDPF in HPLC-grade tetrahydrofuran in advance to prepare a 10 mg / mL solution. After the silicon wafer is placed on the stage, take 30 μL of PTEDPF to cover the silicon wafer. Finally, cover the lid but keep the airtight container not complete...
example 2
[0034] Example 2: Growth of PMTEDPF spherulites.
[0035] In an incubator with an ambient temperature of 40°C and a humidity of 30%, take an appropriate amount of tetrahydrofuran and pour it into a closed container to ensure that there is still some left after the solvent evaporates and fills the closed container. A 1cm×1cm silicon wafer was selected as the substrate, and the silicon wafer was cleaned with dichloromethane, acetone, and ethanol in sequence in advance and ultrasonically cleaned. After drying, the substrate was cleaned with an oxygen plasma cleaner for 6 minutes. After the silicon wafer is cleaned, it is heated on a heating stage at 100°C for 3 minutes, and then placed on a stage in a closed container. Dissolve PMTEDPF in HPLC-grade tetrahydrofuran in advance to prepare a 10 mg / mL solution. After the silicon wafer is placed on the stage, take 30 μL of PMTEDPF to cover the silicon wafer. Finally, cover the lid but keep the airtight container not completely sealed...
example 3
[0037] Example 3: Growth of PQEDPF spherulites.
[0038] In an incubator with an ambient temperature of 40°C and a humidity of 25%, take an appropriate amount of tetrahydrofuran and pour it into an airtight container, so as to ensure that there is still some remaining after the solvent evaporates and fills the airtight container. A 1cm×1cm silicon wafer was selected as the substrate, and the silicon wafer was cleaned with dichloromethane, acetone, and ethanol in sequence in advance and ultrasonically cleaned. After drying, the substrate was cleaned with an oxygen plasma cleaner for 6 minutes. After the silicon wafer is cleaned, it is heated on a heating stage at 100°C for 3 minutes, and then placed on a stage in a closed container. Dissolve PQEDPF in HPLC-grade tetrahydrofuran in advance to prepare a 10 mg / mL solution. After the silicon wafer is placed on the stage, take 30 μL of PQEDPF to cover the silicon wafer. Finally, cover the lid but keep the airtight container not com...
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