Photodetector and manufacturing method thereof, and image sensor
A technology of photodetectors and conductors, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problem of difficulty in reducing the size of pixel units, reduce signal differences, improve stability and quality, and improve alignment accuracy. Effect
Active Publication Date: 2019-12-31
NINGBO SEMICON INT CORP
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Problems solved by technology
[0006] The purpose of the present invention is to provide a photodetector and its manufacturing method and image sensor to solve the problem that the photodetection and imaging devices in the prior art are limited by the technical bottleneck of micro-solder spot welding technology and the size of the pixel unit is difficult to reduce.
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[0069] The photodetector, its manufacturing method, and image sensor proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0070] First, please refer to image 3 , which is a schematic cross-sectional view of a photodetector according to an embodiment of the present invention. Such as image 3 As shown, in the embodiment of the present application, the photodetector 200 includes: a first substrate 210, a plurality of pixel circuits 211 and a common electrode access member 212 are formed in the first substrate 210, the first substrate A plurality of first wiri...
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The invention provides a photodetector, a manufacturing method thereof and an image sensor. According to the photodetector, a plurality of pixel circuits and a common electrode access piece are formedin a first substrate; a plurality of first wiring boards are formed on the front surface of the first substrate; the first wiring board is electrically connected with a corresponding pixel circuit; aplurality of pixel units and isolation wall bodies for isolating the pixel units from one another are formed in a second substrate; the isolation wall body comprises a conductor and a side wall positioned between the conductor and the pixel unit; a plurality of second wiring boards are formed on the front surface of the second substrate; the second wiring boards are correspondingly connected withthe first end poles of the corresponding pixel units; a transparent electrode layer is formed on the back surface of the second substrate; the second end pole of each pixel unit is connected with thetransparent electrode layer; the second wiring board is correspondingly jointed and electrically connected with the corresponding first wiring board; and the transparent electrode layer is electrically connected with the common electrode access piece through the conductor. Thus, the size of the pixel unit can be greatly reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photodetector, a manufacturing method thereof, and an image sensor. Background technique [0002] The photoelectric detection and imaging device based on the photoelectron effect is based on the photoelectron signal generated by the irradiated semiconductor optoelectronic material caused by the received external radiation, and the detection signal or image is obtained through signal amplification and processing. This photoelectric detection and imaging device is widely used in various fields of industry, automobile and national economy. In the near-infrared band, this photoelectric detection and imaging device is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band (850 nm to 12 micron wavelength), it is mainly used for infrared imaging, infrared remote sensing, cited etc. [0003] Please refer...
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Login to View More IPC IPC(8): H01L27/146
CPCH01L27/14634H01L27/14636H01L27/1469H01L27/146H01L27/14609
Inventor 罗海龙
Owner NINGBO SEMICON INT CORP