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a kind of al 3+ Doped low infrared, low thermal conductivity semiconductor ceramic material and preparation method thereof

A technology of ceramic materials and low thermal conductivity, which is applied in the field of Al3+ doped low infrared, low thermal conductivity semiconductor ceramic materials and its preparation, can solve the problems of increased infrared emissivity, low infrared emissivity, high emissivity, etc., to achieve anti- The effect of strong corrosion and oxidation ability, low infrared emissivity, and low thermal conductivity

Active Publication Date: 2021-08-13
INNER MONGOLIA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Low-infrared emission materials are widely used in the fields of military stealth, energy utilization, and optoelectronic information. Conventional low-infrared emission materials are mostly metal materials, but restricted by the properties of metal materials, there are high infrared emission rates and low thermal conductivity in high-temperature environments. The disadvantages of high rate and prone to corrosion and oxidation limit its use in high temperature environments
For example, the long-term use temperature of resin-based metal micro-powder coating and glass-based metal micro-powder coating is only 300-400°C; the infrared emissivity of metal thin film coatings at room temperature is relatively low, but after high temperature oxidation, its infrared emissivity will decrease. Substantial increase; inorganic low-emissivity coatings can withstand high temperatures up to 600°C, but the emissivity is high, 0.2-0.3 higher than that of metal films

Method used

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  • a kind of al <sup>3+</sup> Doped low infrared, low thermal conductivity semiconductor ceramic material and preparation method thereof
  • a kind of al <sup>3+</sup> Doped low infrared, low thermal conductivity semiconductor ceramic material and preparation method thereof
  • a kind of al <sup>3+</sup> Doped low infrared, low thermal conductivity semiconductor ceramic material and preparation method thereof

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Embodiment 1

[0034] In this embodiment SrZr 0.875 Al 0.125 o 3 The citric acid method preparation steps of ceramic material are as follows:

[0035] 1. Preparation of strontium zirconate ceramic powder, this example adopts citric acid method to prepare strontium zirconate powder

[0036] (A-1) According to the molecular formula SrZr 0.875 Al 0.125 o 3 Calculate the addition amount of zirconium nitrate, strontium nitrate, aluminum nitrate, and take zirconium nitrate, strontium nitrate, aluminum nitrate as raw material;

[0037] (A-2) Add 10 times the total mass of reactant raw materials in deionized water and stir. After the reactants are completely dissolved, then add citric acid. 2 times the total number of moles of metal ions in the solution, adjust the pH value of the solution to 8 with ammonia water, then stir and heat the solution in a water bath at 80°C until the solution is viscous, and stand still for 12 hours;

[0038] (A-3) drying at 120°C for 24 hours to obtain a precurso...

Embodiment 2

[0043] In this embodiment SrZr 0.875 Al 0.125 o 3 The preparation method steps of the ceramic material solid phase reaction method are as follows:

[0044] 1. Preparation of strontium zirconate powder, this example adopts solid state reaction method to prepare strontium zirconate powder

[0045] (B-1) According to the molecular formula SrZr 0.875 Al0.125 o 3 Calculate the addition amount of zirconium nitrate, strontium nitrate, aluminum nitrate, and take zirconium nitrate, strontium nitrate, aluminum nitrate as raw material;

[0046] (B-2) high-speed ball milling for 24 hours to fully mix the reactants;

[0047] (B-3) Put the mixed powder in a high-temperature furnace and heat it at 1600° C. for 6 hours to obtain a strontium zirconate ceramic powder material.

[0048] 2. Biscuit molding: Mix the obtained strontium zirconate ceramic powder material with polyvinyl alcohol (PVA) evenly, grind, dry, then put the mixture in a mold, press dry powder into tablets, the molding p...

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Abstract

The invention discloses an Al 3+ Doped low infrared, low thermal conductivity semiconductor ceramic material and preparation method thereof, the molecular formula of the semiconductor ceramic material is SrZr 1‑x al x o 3 , where x is Al 3+ Doping replaces the atomic percentage of Zr. The preparation method is based on strontium zirconate SrZrO 3 as the matrix, doped with different proportions of Al 3+ The preparation of the semiconducting ceramic material specifically includes the following steps: (1) preparation of strontium zirconate powder; (2) molding of green body; (3) ceramic firing. The infrared radiance of the semiconductor ceramic material prepared by the present invention is less than 0.5 in the 3-5 μm band, and the thermal conductivity is lower than 2.5W·m ‑1 ·K ‑1 , can be used at room temperature to 1400°C ambient temperature, and the thermal conductivity can be reduced to 1.5W·m at 600‑1200°C ‑1 ·K ‑1 Below, it can serve well in a high temperature environment, and has stable performance in a long-term high temperature environment, and has strong corrosion resistance and oxidation resistance.

Description

technical field [0001] The invention relates to the technical field of new materials. Specifically an Al 3+ Doped low infrared, low thermal conductivity semiconductor ceramic material and its preparation method. Background technique [0002] Low-infrared emission materials are widely used in the fields of military stealth, energy utilization, and optoelectronic information. Conventional low-infrared emission materials are mostly metal materials, but restricted by the properties of metal materials, there are high infrared emission rates and low thermal conductivity in high-temperature environments. The disadvantages of high rate and prone to corrosion and oxidation limit its use in high temperature environments. For example, the long-term use temperature of resin-based metal micro-powder coating and glass-based metal micro-powder coating is only 300-400°C; the infrared emissivity of metal thin film coatings at room temperature is relatively low, but after high temperature o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/48
CPCC04B35/48C04B2235/3217C04B2235/3218C04B2235/442C04B2235/443C04B2235/444C04B2235/448C04B2235/449C04B2235/96C04B2235/9607
Inventor 马文李恩博白玉董红英张鹏张辰楠齐英伟陈伟东
Owner INNER MONGOLIA UNIV OF TECH