A reconfigurable puf construction method based on random magnetic domain wall movement
A construction method and magnetic domain wall technology, applied in the field of information security, can solve the problems of non-reconfigurable PUF, uneven thickness of magnesium oxide film layer, etc.
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Embodiment 1
[0065] Embodiment 1, using the magnetron sputtering process to grow a film of Ta(10nm) / CoFeB(1nm) / MgO(1nm) / Ta(2nm) from top to bottom; then using photolithography, etching process to obtain 6× 6μm 2 non-volatile devices. At this time, the adopted reset current pulse has an amplitude of 10 mA and a width of 1 ms.
[0066] Step S2. Keeping the magnetic field constant, a set current pulse opposite to the direction of the reset current pulse is applied to the first pair of bottom electrodes of each nonvolatile device, so that the magnetic domain walls of each nonvolatile device move randomly.
[0067] When the set current pulse is applied to the first pair of bottom electrodes, and the current flows through the spin current generation layer, due to the spin-orbit coupling effect, the spin current generation layer will generate a spin current perpendicular to the ferromagnetic layer, and the spin current Acting on the ferromagnetic layer, adding an external magnetic field is used...
Embodiment 2
[0085] Embodiment 2 is similar to Embodiment 1, the only difference is that the application of reset current pulse + external magnetic field is replaced by reset magnetic field pulse, the set current pulse is replaced by set magnetic field pulse, and the magnetic field is directly used to push the magnetic domain wall to move.
[0086] A reset magnetic field pulse is applied to the first pair of bottom electrodes, and the reset magnetic field pulse will reverse the magnetization direction of the magnetic domain with the opposite magnetization direction, thereby pushing the magnetic domain walls of each non-volatile device to move to the edge, making all non-volatile devices All magnetic domains in the ferromagnetic layer are magnetized in the same direction.
[0087] The direction of the applied reset magnetic field pulse is perpendicular to the direction of the ferromagnetic layer, and the magnetic field strength is greater than the coercive force of the ferromagnetic layer. ...
Embodiment 4
[0117] Embodiment 4 is similar to Embodiment 3, the only difference is that reset current pulse + external magnetic field is replaced by reset magnetic field pulse, set current pulse + external magnetic field is replaced by set magnetic field pulse, and the planar magnetic field is directly used to move the magnetic domain wall.
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