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A reconfigurable puf construction method based on random magnetic domain wall movement

A construction method and magnetic domain wall technology, applied in the field of information security, can solve the problems of non-reconfigurable PUF, uneven thickness of magnesium oxide film layer, etc.

Active Publication Date: 2021-04-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, its randomness comes from the uneven thickness of the magnesium oxide film layer. After one etching of magnesium oxide, the randomness of the structure is determined, and the PUF cannot be reconfigured.

Method used

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  • A reconfigurable puf construction method based on random magnetic domain wall movement
  • A reconfigurable puf construction method based on random magnetic domain wall movement
  • A reconfigurable puf construction method based on random magnetic domain wall movement

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Embodiment 1, using the magnetron sputtering process to grow a film of Ta(10nm) / CoFeB(1nm) / MgO(1nm) / Ta(2nm) from top to bottom; then using photolithography, etching process to obtain 6× 6μm 2 non-volatile devices. At this time, the adopted reset current pulse has an amplitude of 10 mA and a width of 1 ms.

[0066] Step S2. Keeping the magnetic field constant, a set current pulse opposite to the direction of the reset current pulse is applied to the first pair of bottom electrodes of each nonvolatile device, so that the magnetic domain walls of each nonvolatile device move randomly.

[0067] When the set current pulse is applied to the first pair of bottom electrodes, and the current flows through the spin current generation layer, due to the spin-orbit coupling effect, the spin current generation layer will generate a spin current perpendicular to the ferromagnetic layer, and the spin current Acting on the ferromagnetic layer, adding an external magnetic field is used...

Embodiment 2

[0085] Embodiment 2 is similar to Embodiment 1, the only difference is that the application of reset current pulse + external magnetic field is replaced by reset magnetic field pulse, the set current pulse is replaced by set magnetic field pulse, and the magnetic field is directly used to push the magnetic domain wall to move.

[0086] A reset magnetic field pulse is applied to the first pair of bottom electrodes, and the reset magnetic field pulse will reverse the magnetization direction of the magnetic domain with the opposite magnetization direction, thereby pushing the magnetic domain walls of each non-volatile device to move to the edge, making all non-volatile devices All magnetic domains in the ferromagnetic layer are magnetized in the same direction.

[0087] The direction of the applied reset magnetic field pulse is perpendicular to the direction of the ferromagnetic layer, and the magnetic field strength is greater than the coercive force of the ferromagnetic layer. ...

Embodiment 4

[0117] Embodiment 4 is similar to Embodiment 3, the only difference is that reset current pulse + external magnetic field is replaced by reset magnetic field pulse, set current pulse + external magnetic field is replaced by set magnetic field pulse, and the planar magnetic field is directly used to move the magnetic domain wall.

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Abstract

The invention discloses a reconfigurable PUF construction method based on random magnetic domain wall movement, which belongs to the field of information security. Including: a reset current pulse is applied to the first pair of bottom electrodes of each non-volatile device in the device with SOT effect, and an external magnetic field is applied at the same time, so that the magnetic domain magnetization direction of the ferromagnetic layer in each non-volatile device is the same; the magnetic field is maintained Invariably, the first pair of bottom electrodes of each non-volatile device is fed with a set current pulse opposite to the direction of the reset current pulse, so that the magnetic domain walls of each non-volatile device move randomly; in each non-volatile device The first pair of bottom electrodes of the device is fed with a test current to read the abnormal Hall resistance of each non-volatile device; the abnormal Hall resistance of each non-volatile device array forming a device with SOT effect is converted into a binary code, thereby Realize reconfigurable PUF. The present invention utilizes the current or magnetic field to act on the magnetic domain wall to promote the random movement of the magnetic domain wall. The PUF has a simple structure, and the randomness, that is, the safety is guaranteed.

Description

technical field [0001] The invention belongs to the field of information security, and more specifically relates to a reconfigurable PUF construction method based on random magnetic domain wall movement. Background technique [0002] With the rapid development of the Internet of Things today, the information security of devices is very important. Compared with traditional encryption methods such as storing secret keys in memory, Physical Unclonable Function (PUF) has many advantages, such as small footprint, low power consumption, harder to be attacked, and lower cost. Therefore, PUF has become one of the research hotspots in the field of hardware security in recent years. [0003] PUF is derived from the inevitable differences in the manufacturing process of the device and the physical randomness inside the device, so PUF is difficult to be cloned and has high security. Applying a stimulus to a device will produce a unique and unpredictable response. For the same device, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/14H01L43/08G11C11/22H10N52/00H10N50/10H10N52/01
CPCG11C11/22H10N52/00H10N52/01H10N50/10
Inventor 游龙曹真李若凡张帅洪正敏
Owner HUAZHONG UNIV OF SCI & TECH
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