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Photoetching projection objective lens

A technology of lithography projection and objective lens, which is applied in the field of lithography and can solve problems such as small field of view

Active Publication Date: 2020-02-07
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The field of view of the existing lithography projection objective lens is relatively small, and this problem needs to be solved urgently

Method used

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  • Photoetching projection objective lens
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  • Photoetching projection objective lens

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] figure 1 For the structural schematic diagram of the lithographic projection objective lens provided in Embodiment 1 of the present invention, refer to figure 1 , the lithography projection objective lens includes the first lens group G1, the second lens group G2, the stop stop, the third lens group G3 and the fourth lens group G4 arranged in sequence along the optical axis, and the plane where the stop stop is located is the stop surface , the diaphragm can limit the beam size of a lithographic projection objective. The first lens group G1 and the fourth lens group G4 are symmetrical about the diaphragm plane, and the second lens group G2 and the third lens group G3 are symmetrical about the diaphragm plane. The first lens group G1 and the fourth lens group G4 have positive refractive power, and the second lens group G2 and the third lens group G3 have negative refractive power. The focal power is equal to the difference between the convergence degree of the image be...

Embodiment 2

[0059] Figure 6 For the structural schematic diagram of the lithographic projection objective lens provided in Embodiment 1 of the present invention, refer to Figure 6 , the lithography projection objective lens includes the first lens group G1, the second lens group G2, the stop stop, the third lens group G3 and the fourth lens group G4 arranged in sequence along the optical axis, and the plane where the stop stop is located is the stop surface . The first lens group G1 and the fourth lens group G4 are symmetrical about the diaphragm plane, and the second lens group G2 and the third lens group G3 are symmetrical about the diaphragm plane. The first lens group G1 and the fourth lens group G4 have positive refractive power, and the second lens group G2 and the third lens group G3 have negative refractive power. The first lens group G1 and the fourth lens group G4 both include two biconcave negative lenses, two biconvex positive lenses and a meniscus positive lens, and the s...

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Abstract

The embodiment of the invention provides a photoetching projection objective lens. The photoetching projection objective lens comprises a first lens group, a second lens group, a diaphragm, a third lens group and a fourth lens group which are sequentially arranged along an optical axis; the plane where the diaphragm is located is a diaphragm surface; the first lens group and the fourth lens groupare symmetrical about the diaphragm surface, and the second lens group and the third lens group are symmetrical about the diaphragm surface; the first lens group and the fourth lens group have positive focal power, and the second lens group and the third lens group have negative focal power; each of the first lens group and the fourth lens group comprises two biconcave negative lenses, two biconvex positive lenses and a meniscus positive lens; each of the second lens group and the third lens group comprises two meniscus negative lenses, a biconcave negative lens and a biconvex positive lens. The embodiment of the invention provides the photoetching projection objective lens, which increases the view field size of a projection exposure device and improves the yield.

Description

technical field [0001] Embodiments of the present invention relate to lithography technology, and in particular to a lithography projection objective lens. Background technique [0002] Optical lithography is a technique for projectively replicating mask patterns with light. Integrated circuits are made by projection exposure equipment. With the help of projection exposure equipment, patterns with different mask patterns are imaged onto substrates, such as silicon wafers or LCD panels, for the manufacture of a series of structures such as integrated circuits, thin-film magnetic heads, liquid crystal display panels, or micro-electromechanical systems (MEMS). Over the past few decades, the technical level of exposure equipment has been continuously developed to meet the needs of smaller line size, larger exposure area, higher reliability and productivity, and lower cost. [0003] The field of view of the existing lithography projection objective lens is relatively small, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B13/00G03F7/20
CPCG02B13/0015G03F7/70241
Inventor 安福平储兆祥
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD