Tungsten chemical mechanical planarization (CMP) with low dishing and low erosion topography
A technology of chemical machinery and compounds, applied in other chemical processes, chemical instruments and methods, surface etching compositions, etc., can solve unsatisfied problems
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Embodiment 1
[0180] Example 1: Tungsten and TEOS removal rates of CMP compositions.
[0181] CMP compositions were prepared as shown in Table 1, wherein the concentrations of composition components are expressed as weight percents of the total composition. CMP compositions 1 and 2 contained 100 ppm and 500 ppm of 1,8-diazabicyclo[5.4.0]undec-7-ene (DBU), respectively. The pH of the composition is 2.3. The solvent used is water, which brings the total weight of the composition to 100%.
[0182] Table 1
[0183] combination 1 2 Silica abrasive particles (FUSO PL-7) (wt%) 1.3 1.3 Glycine (weight%) 0.100 0.100 Malonic acid (weight%) 0.08 0.08 Iron (III) nitrate nonahydrate (weight%) 0.01 0.01 1,8-diazabicyclo[5.4.0]undec-7-ene (weight%) 0.01 0.05 Hydrogen peroxide (weight%) 2 2 pH 2.3 2.3
[0184] The tungsten and TEOS blanket and patterned tungsten films were polished on a Mirra polisher at a flow rate of 120 ml / min at 4 psi ...
Embodiment 2
[0188] Example 2: Depression of CMP Compositions
[0189] The data in Table 2 demonstrates that both compositions have a high removal rate for tungsten and a low removal rate for TEOS. The composition used in Example 1 was tested for tungsten dishing.
[0190] Dishing of tungsten was tested on different arrays, including a 9 x 1 micron array (dimples expressed in microns) when the wafer was polished for an additional 15 s time or overpolish (OP) time after the end of pattern wafer polishing detected by using eddy current measurements. line width / spacer separated tungsten line width / trench), 7×3 micron array, 5×5 micron array. The dent data are shown in Table 3.
[0191] The dishing data shows that both compositions provide low dishing (less than 500 Angstroms) for all feature array feature sizes. For a 9x1 micron structure, the dishing is less than 300 Angstroms.
[0192] Table 3. Depression (Angstroms)
[0193] array Composition 1 Composition 2 9 / 1 288...
Embodiment 3
[0195] Example 3: CMP compositions with hydrolyzed DBU versus non-hydrolyzed DBU
[0196] The CMP slurry formulations listed in Table 4 were prepared using two different methods. In the first method, CMP slurries were prepared by directly adding 0.02 wt% DBU feedstock, where DBU was non-hydrolyzed, to the slurry. In the second method, a 10% by weight aqueous solution of DBU was prepared, stored for 2 days, and then 0.02% by weight of hydrolyzed DBU was added to the CMP slurry. When used, hydrogen peroxide was added to constitute 2% by weight of the slurry formulation. The patterned tungsten wafers were polished according to the polishing method described in Example 2, and various dishing and erosion parameters were measured. Sag and erosion results are summarized in the figure 2 with 3 middle.
[0197] Table 4
[0198] Concentration (weight%) Glycine 0.1 Fuso PL-7 Colloidal Silica Granules 1.5 Iron(III) nitrate nonahydrate 0.01 Malonat...
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