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A kind of ultraviolet LED epitaxial wafer and preparation method thereof

An LED epitaxial wafer and ultraviolet technology, which is applied in the field of material chemistry, can solve the problems of low luminous efficiency, low hole recombination efficiency, and low hole concentration of ultraviolet LEDs, so as to improve the luminous efficiency, improve the electron-hole recombination efficiency, improve the Effect of hole concentration

Active Publication Date: 2022-02-22
MAANSHAN JASON SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides an ultraviolet LED epitaxial wafer and a preparation method thereof, which are used to solve the problems in the prior art that the concentration of holes participating in effective radiation recombination is low, and the hole recombination efficiency is low, resulting in low luminous efficiency of ultraviolet LEDs.

Method used

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  • A kind of ultraviolet LED epitaxial wafer and preparation method thereof
  • A kind of ultraviolet LED epitaxial wafer and preparation method thereof
  • A kind of ultraviolet LED epitaxial wafer and preparation method thereof

Examples

Experimental program
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Effect test

specific Embodiment 1

[0109] 1. The temperature of the MOCVD reaction chamber is raised to 900°C, and the pressure is 400mbar. At the same time, trimethylaluminum (150ml / min) and ammonia gas are introduced for 3 minutes to react on the sapphire to form a 25nm AlN buffer layer; raise the temperature to 1250 °C, the pressure was reduced to 100mbar, and hydrogen, trimethylaluminum (400ml / min) and ammonia were introduced for 90min to form a 1500nm non-doped AlN base layer.

[0110] 2. Lower the temperature to 1160°C, maintain the pressure at 200mbar, and feed hydrogen, trimethylgallium (100ml / min), trimethylaluminum (360ml / min) and ammonia for 60min; grow a layer of non- Doped AlGaN layer, the Al composition of AlGaN is 55%.

[0111] 3. The temperature and pressure are constant, and hydrogen, trimethylgallium (100ml / min), trimethylaluminum (360ml / min), silane and ammonia are introduced for 90 minutes; a layer of N-type AlGaN layer with a thickness of 1500nm is grown; AlGaN The Al component is 55%, and...

specific Embodiment 2

[0125] 1. The temperature of the MOCVD reaction chamber is raised to 950°C and the pressure is 400mbar. At the same time, trimethylaluminum (150ml / min) and ammonia gas are introduced for 3 minutes to react on the sapphire to form a 25nm AlN buffer layer; raise the temperature to 1250 ℃, the pressure is reduced to 100mbar, and hydrogen, trimethylgallium (50ml / min), trimethylaluminum (400ml / min) and ammonia are introduced for 90min to form a 1500nm non-doped AlGaN layer with an Al composition of 95% ;

[0126] 2. Lower the temperature to 1160°C, maintain the pressure at 200mbar, and feed hydrogen, trimethylgallium (100ml / min), trimethylaluminum (360ml / min) and ammonia for 60min. grow a non-doped AlGaN layer with a thickness of 1000nm, and the Al composition of AlGaN is 55%;

[0127]3. The temperature and pressure are constant, and hydrogen, trimethylgallium (100ml / min), trimethylaluminum (360ml / min), silane and ammonia are introduced for 60 minutes, and a layer of N-type AlGaN ...

specific Embodiment 3

[0140] 1. The temperature of the MOCVD reaction chamber is raised to 850°C and the pressure is 400mbar. At the same time, trimethylaluminum (150ml / min) and ammonia gas are introduced for 3 minutes to react on the sapphire to form a 25nm AlN buffer layer; raise the temperature to 1200 °C, the pressure was reduced to 100mbar, and hydrogen, trimethylaluminum (400ml / min) and ammonia were introduced for 120min to form a 2000nm non-doped AlN base layer.

[0141] 2. Lower the temperature to 1160°C, maintain the pressure at 200mbar, and feed hydrogen, trimethylgallium (100ml / min), trimethylaluminum (360ml / min) and ammonia for 90min; grow a layer of non- Doped AlGaN layer, the Al composition of AlGaN is 55%.

[0142] 3. The temperature and pressure are constant, and hydrogen, trimethylgallium (100ml / min), trimethylaluminum (360ml / min), silane and ammonia are fed for 90 minutes to grow an N-type AlGaN layer with a thickness of 1500nm; AlGaN The Al component is 55%, and the doping conce...

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Abstract

The invention provides an ultraviolet LED epitaxial wafer and a preparation method thereof, relating to the technical field of material chemistry, comprising the following steps: 1) growing Q quantum well structures on an N-type AlGaN layer, each of the quantum well structures comprising a quantum barrier layer and a quantum well layer, 2≤Q≤100; 2) growing a terminal quantum barrier layer on the Qth quantum well structure; wherein, at least one of the quantum well structures contains Mg atoms and there are at most Q-1 quantum wells The structure contains Mg atoms, and the terminal quantum barrier layer contains Mg atoms. The preparation method of the LED epitaxial wafer provided by the invention can effectively increase the hole concentration in the quantum well structure, thereby improving the electron-hole recombination efficiency in the quantum well structure, and improving the luminous efficiency of the ultraviolet LED.

Description

technical field [0001] The invention relates to the technical field of material chemistry, in particular to an ultraviolet LED epitaxial wafer and a preparation method thereof. Background technique [0002] Group III nitride ultraviolet material (AlGaN) is the core material of ultraviolet solid ultraviolet light source. AlGaN ultraviolet LED products can emit ultraviolet light from 200nm to 365nm. Biological detection, non-line-of-sight communication, cold chain transportation and other fields. For example, the 200nm-280nm UVC segment ultraviolet LED is the most important sterilizing material for ultraviolet sterilizing devices, and is widely used in surface, air, water and other sterilizing devices, and is used for short-distance noise-free communication in the military; 280nm-320nm UVB The wavelength band has an excellent phototherapy effect, especially for the treatment of vitiligo; the 320nm~365nm band has a good light curing function, and is often used in nail curing, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/32
CPCH01L33/06H01L33/325H01L33/007
Inventor 黄小辉梁旭东陈向东徐孝灵王小文
Owner MAANSHAN JASON SEMICON CO LTD