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Three-dimensional memory device with multi-stack structure and forming method thereof

A storage device, three-dimensional technology, applied in the fields of electric solid-state devices, semiconductor devices, semiconductor/solid-state device manufacturing, etc., can solve the problems of high cost, difficult plane process and manufacturing technology, etc.

Active Publication Date: 2020-02-14
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become more difficult and costly
As a result, the storage density of planar memory cells approaches the upper limit

Method used

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  • Three-dimensional memory device with multi-stack structure and forming method thereof
  • Three-dimensional memory device with multi-stack structure and forming method thereof
  • Three-dimensional memory device with multi-stack structure and forming method thereof

Examples

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Embodiment Construction

[0013] While specific configurations and arrangements are discussed, it should be understood that this is done for illustrative purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements can be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure can also be used in a variety of other applications.

[0014] It is noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, but Not every embodiment may include that particular feature, structure or characteristic. Furthermore, such phrases are not necessarily referring to the same embodiment. In addition, when a particular feature, structure or characteristic is described in connection with an embodim...

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PUM

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Abstract

Embodiments of a structure and method for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, an alternate stack on the substrate, anda barrier structure extending vertically through the alternate stack. The alternate stack includes (i) an alternate dielectric stack layer having a plurality of dielectric layer pairs surrounded at least laterally by the barrier structure, and (ii) an alternate conductor / dielectric stack layer having a plurality of conductor / dielectric layer pairs. The 3D memory device further includes a channel structure and a source structure each vertically extending through the alternate conductor / dielectric stack layer and a contact structure vertically extending through the alternate dielectric stack layer. The source structure includes at least one staggered portion along a corresponding sidewall.

Description

Background technique [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods for forming the 3D memory devices. [0002] Planar memory cells have been shrunk to smaller sizes by improving process technology, circuit design, programming algorithms, and fabrication techniques. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become more difficult and more expensive. As a result, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of a 3D memory device having a multi-stack structure and a method for forming the 3D memory device are provided. [0005] In one example, a 3D memory devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11573H01L27/11575H01L27/11582H10B41/27H10B43/20H10B43/35H10B43/27H10B43/40H10B43/50
CPCH10B43/50H10B43/40H10B43/35H10B43/27H01L25/0657H01L2225/06541H01L2225/06527H01L25/50H01L21/76802H01L21/76831H10B41/27
Inventor 朱宏斌唐娟
Owner YANGTZE MEMORY TECH CO LTD
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