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Programming method and system of memory

A programming method and memory technology, applied in the field of memory programming methods and systems, can solve problems such as poor memory accuracy, and achieve the effects of reducing impact, improving accuracy and stability, and avoiding changes in thresholds

Inactive Publication Date: 2020-02-25
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a memory programming method and system to solve the technical problem of poor memory programming accuracy

Method used

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  • Programming method and system of memory
  • Programming method and system of memory
  • Programming method and system of memory

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Experimental program
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Embodiment A

[0025] see figure 1 , figure 1 It is a schematic flow chart of a memory programming method in Embodiment A of the present invention. The memory programming method is used to improve the durability and ease of use of data read from the memory, so as to improve the life of the memory. The memory programming method includes the following steps:

[0026] Step S1: In programming sequence B1, apply a step programming voltage to the memory cell, the step programming voltage has a step-like rising voltage waveform, the voltage waveform includes a preset number of voltage steps, and each voltage step has a preset step Width, with a preset step increase D between adjacent voltage steps -pgm ;

[0027] Step S2: When verifying the timing sequence Y1, apply a verifying voltage to the storage unit, and the verification ends when the verification is successful;

[0028] Step S3: If the verification fails, increase the amplitude of the programming voltage again after verifying the timing s...

Embodiment B

[0045] see Figure 6 , Figure 6 It is a schematic diagram of the module structure of the programming system 12 of the memory of the present invention. The memory programming system 12 can execute the memory programming method provided by any embodiment of the present invention. The memory programming system 12 includes:

[0046] The programming module 121 is used to apply a step programming voltage to the memory cell when programming the sequence B1, the step programming voltage has a step-like rising voltage waveform, the voltage waveform includes a preset number of voltage steps, each voltage step has a preset The set step width, there is a preset step increase D between adjacent voltage steps -pgm ;

[0047] The verification module 122 is used to apply a verification voltage to the storage unit when verifying the sequence Y1, and the verification ends when the verification is successful;

[0048] If the verification fails, after verifying the sequence Y1, the programm...

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Abstract

The invention discloses a programming method and system of a memory. The programming method of the memory comprises the following steps: when the time sequence B1 is programmed, a step programming voltage is applied to the memory unit, the step programming voltage has a step-rising voltage waveform, the voltage waveform comprises a preset number of voltage steps, each voltage step has a preset step width, and a preset step amplification D-pgm is formed between adjacent voltage steps; when the timing sequence Y1 is verified, a verification voltage is applied to the memory unit, and the verification is ended if the verification is successful; and if the verification fails, the amplitude of the programming voltage is increased again after the time sequence Y1 is verified so as to perform verification again. The programming method and system of the memory have the advantage of improving the programming accuracy of the memory.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of memory, and in particular, to a memory programming method and system. Background technique [0002] Memory is a component that must be used in programming, such as Nand flash memory. Nand flash memory is a kind of non-volatile memory, which has the advantages of fast rewriting speed and large storage capacity. However, during the programming operation of the Nand flash memory, verification failures will occur, and after each verification failure, the amplitude of the programming voltage needs to be increased. In the prior art, when programming and writing data for the first time, a higher programming voltage is directly applied to the selected word line of the memory, and the higher programming voltage will affect the memory cells that do not need to be programmed on the selected word line. As a result, the threshold value of memory cells that do not need to be programmed will i...

Claims

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Application Information

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IPC IPC(8): G11C16/12
CPCG11C16/12
Inventor 贺元魁潘荣华
Owner GIGADEVICE SEMICON (BEIJING) INC