Semiconductor device and method for forming same

Abstract

The disclosure provides a semiconductor device and a method for forming the same. In an embodiment, a method includes: forming a gate dielectric layer on an interface layer; forming a doping layer onthe gate dielectric layer, the doping layer including a dipole-inducing element; annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer to a first side of the gate dielectric layer adjacent the interface layer; removing the doping layer; forming a sacrificial layer on the gate dielectric layer, a material of the sacrificial layer reacting with residual dipole-inducing elements at a second side of the gate dielectric layer adjacent the sacrificial layer; removing the sacrificial layer; forming a capping layer on the gate dielectric layer; and forming agate electrode layer on the capping layer.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor devices, and more particularly to methods for adjusting gate threshold voltages. Background technique [0002] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. The manufacturing method of semiconductor device is usually to deposit insulating or dielectric layer, conductive layer, and semiconductor layer on the semiconductor substrate in order, and then use photolithography to pattern the various material layers to form circuit components and units on the semiconductor substrate. [0003] The semiconductor industry continues to reduce the minimum structure size to improve the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, or the like) to integrate more components into a given area. However, as the minimum structure size sh...

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Problems solved by technology

However, as the minimum structure size shrinks, additional issues may need to be addressed

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