A half-bridge driving circuit and its control method

Abstract

The invention discloses a novel half-bridge driving circuit and a control method thereof. The half-bridge drive circuit is used for driving a power module. The driving circuit comprises an upper tubedriving circuit and a lower tube driving circuit, the upper tube driving circuit is in interlocking connection with the lower tube driving circuit, the upper tube driving circuit and the lower tube driving circuit are the same in circuit structure, the upper tube driving circuit comprises a shaping circuit and an output circuit, the output circuit is connected with a shaping circuit, the shaping circuit controls the output circuit to output an adjustable turn-on voltage or an adjustable turn-off voltage, and the upper tube driving circuit and the lower tube driving circuit cannot output the turn-on voltage or the turn-off voltage at the same time. The anti-interference performance of the half-bridge driving circuit is improved through the shaping circuit, the reliability of the half-bridgedriving circuit is improved through interlocking connection of the upper tube driving circuit and the lower tube driving circuit, the drive power is reduced by outputting adjustable turn-on voltage and turn-off voltage, and the compatibility of the half-bridge driving circuit is enhanced.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a half-bridge drive circuit and a control method thereof. Background technique [0002] The voltage used by the traditional IGBT drive circuit or field effect transistor drive circuit to turn on and off the power module is to generate the turn-off voltage Voff through the Zener diode, and the turn-off voltage Voff subtracted from the total voltage Vtot is the turn-on voltage Von. In this traditional method, since the output turn-on voltage of the driving circuit is fixed, the driving power will be increased for no reason. And when the upper tube and the lower tube of the drive circuit receive the conduction signal at the same time, a short circuit will occur, causing the power module to burst. [0003] In addition, besides the most widely used semiconductor devices on the market are IGBTs and field effect transistors using Si materials, major semiconductor manufactur...

AI Technical Summary

Problems solved by technology

In this traditional method, since the output turn-on voltage of the drive circuit is fixed, the drive power will be increased for no reason.

And when the upper tube and the lower tube of the drive circuit receive the conduction signal at the same time, a short circuit will occur, causing the power module to burst

[0003] In addition, besides the most widely used semiconductor devices on the market are IGBTs and field effect transistors using Si materials, major semiconductor manufacturers have invested a lot of energy in researching SiC semiconductor devices with wide bandgap; but now different manufacturers have launched SiC semiconductor devices. The recommended turn-on and turn-off voltages are different, and the turn-on voltage of the driver IC is fixed, so it is necessary to develop different driver boards to match it, which will undoubtedly increase the development cycle and project cost

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