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High-temperature Hall sensor integrating rear vertical type and front horizontal type three-dimensional magnetic field detection function and manufacturing method thereof

A technology of Hall sensor and three-dimensional magnetic field, which is applied in the manufacture/processing of Hall effect devices, devices applying electro-magnetic effects, and electromagnetic devices, and can solve the problem of reducing the current and voltage of vertical Hall sensors and limiting miniature And problems such as the new application of nano-Hall sensors and the reduction of sensor sensitivity, etc., to achieve the effect of small size, small channel electron binding, and large band gap

Active Publication Date: 2021-11-23
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regardless of the integration method, the final device size is large, which limits its new applications in micro- and nano-Hall sensors
[0006] There is a high-density two-dimensional electron gas (2DEG) induced by polarized charges in the potential well at the GaN heterojunction (typically AlGaN / GaN) interface, and there is a vertical electric field in the direction perpendicular to the channel, and the electrons in the channel are Bound in it, although it has no effect on the horizontal Hall sensor, but the current and voltage sensed by the vertical Hall sensor are reduced, and the sensor sensitivity is reduced

Method used

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  • High-temperature Hall sensor integrating rear vertical type and front horizontal type three-dimensional magnetic field detection function and manufacturing method thereof
  • High-temperature Hall sensor integrating rear vertical type and front horizontal type three-dimensional magnetic field detection function and manufacturing method thereof
  • High-temperature Hall sensor integrating rear vertical type and front horizontal type three-dimensional magnetic field detection function and manufacturing method thereof

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Embodiment 1

[0034] The application of the present invention proposes a technical scheme of a three-dimensional Hall sensor with a completely wide bandgap material suitable for high-temperature working environments that integrates a SiC vertical Hall sensor on the back and a GaN heterojunction horizontal Hall sensor on the front. Such as figure 1 As shown in the figure above, it is a schematic diagram of the front structure of the device structure. The GaN heterojunction structure is used to make a cross horizontal Hall sensor, which is used to sense the magnetic field perpendicular to the surface of the device. The electrodes C3 and C4 are signal input terminals, which can input current or voltage, and measure the potential difference between the electrodes S3 and S4. It is also possible to use the electrodes S3 and S4 as signal input terminals to input current or voltage, and measure the potential difference between the electrodes C3 and C4. The GaN heterojunction structure effectively...

Embodiment 2

[0047] The production process of the specific embodiment of the application target device of the present invention is described as follows:

[0048] 1) Substrate preparation: prepare the SiC material substrate, clean the substrate material, and remove pollutants on the surface of the SiC substrate.

[0049] 2) Epitaxial growth: AlGaN / GaN heterojunction structure and buffer layer AlN are epitaxially grown by metal-organic compound chemical vapor deposition, and the resulting GaN epitaxial layer is unintentionally doped, with a thickness of 10 μm and a background electron concentration of less than 3×10 16 cm -3 , the thickness of the AlGaN barrier layer on the epitaxial layer is 25nm, and the Al composition is 0.25. The buffer layer is AlN with a thickness of 50nm.

[0050] 3) Mesa etching: the epitaxially grown samples are coated with glue (use AZ6130 positive photoresist), uniform glue (forward rotation 600rpm-3s, back rotation 1000rpm-20s, the final thickness of photoresis...

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Abstract

The invention discloses a high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions and a manufacturing method thereof, belonging to the field of semiconductor sensors. Technical points: including a substrate, a buffer layer, and a heterojunction structure layer. The buffer layer and the heterojunction structure layer are grown sequentially on the substrate, and there is a two-dimensional electron gas in the heterojunction structure layer; The surface is provided with a vertical Hall sensor for sensing the magnetic field parallel to the surface of the device, and the upper surface of the heterojunction structure layer is provided with a "cross" horizontal Hall sensor for sensing the magnetic field perpendicular to the device surface. Beneficial effects: the present invention adopts completely wide bandgap materials suitable for high-temperature environments, and the high-temperature Hall sensor integrated with back vertical type and front horizontal type three-dimensional magnetic field detection functions can work stably at high temperatures and measure any direction in space At the same time, it has greater sensitivity when measuring the magnetic field in the X, Y, and Z directions.

Description

technical field [0001] The invention belongs to the field of semiconductor sensors, and in particular relates to a high-temperature Hall sensor integrating back vertical and front horizontal three-dimensional magnetic field detection functions and a manufacturing method thereof. Background technique [0002] Since the discovery of the Hall effect in the 1970s, the Hall sensor based on the Hall effect principle has been widely used in aerospace, biomedicine, and industrial production due to its good linearity, good dynamic characteristics, and high accuracy. and other fields. Traditional Hall sensors are mainly made of materials such as silicon (Si), gallium arsenide (GaAs), indium arsenide (InAs) and indium antimonide (InSb). Although they can meet the needs of low temperature or ambient temperature, they are currently The market still needs Hall sensor products that can work stably in environments ranging from room temperature to higher than 400°C. For example, the local ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/04H01L43/06H01L43/10H01L27/22H01L43/14H10N52/80H10N52/00H10N52/01
CPCH10B61/00H10N59/00H10N52/80H10N52/00H10N52/01H10N52/101H10N50/85
Inventor 黄火林张卉
Owner DALIAN UNIV OF TECH