Unlock instant, AI-driven research and patent intelligence for your innovation.

Positive photoresist composition and method for forming patterned polyimide layer

A technology of polyimide layer and positive photoresist, which is applied in the photoplate making process of pattern surface, photosensitive material for optical mechanical equipment, optics, etc., and can solve the chemical resistance of polyimide stripper Poor quality, affecting the quality of the patterned polyimide film, unable to protect the polyimide film as scheduled, etc., to achieve good protection effect, optimized process and quality, and excellent chemical resistance

Active Publication Date: 2020-03-20
ECHEM SOLUTIONS
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the positive photoresist films currently on the market have the problem of poor chemical resistance to polyimide strippers, which makes the positive photoresist film unable to protect the polyimide film as expected, and even affects the patterned polyimide film. Quality of imide film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Positive photoresist composition and method for forming patterned polyimide layer
  • Positive photoresist composition and method for forming patterned polyimide layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Below, several examples are cited to illustrate the implementation of the present invention; those skilled in the art can easily understand the advantages and effects that the present invention can achieve through the contents of this specification, and make various modifications without departing from the spirit of the present invention and changes to implement or apply the content of the present invention.

[0038] Preparation of positive photoresist composition

[0039] Various cresol-type phenolic resins (cresol-type novolac resin), diazonaphthoquinone photosensitizer (1-phenol-4-(1-(4-(2-(4-(phenolylmethyl)benzene) Diazonaphthoquinone derivatives of base) propyl group-2) phenyl)-1-(4-phenolyl phenyl) ethyl) phenyl), fluorine surfactant (MEGAFAC F-477, purchased from DIC Corporation ) and an organic solvent (2-heptanone), were mixed according to the dosage shown in Table 1 below, and were formulated into the positive photoresist compositions of Examples 1 to 3 and Co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a positive photoresist composition and a method for forming a patterned polyimide layer. The positive photoresist composition comprises cresol type phenolic resin, a diazonaphthoquinone photosensitizer and an organic solvent, 100 parts by weight of the cresol-type phenolic resin is used as a reference; wherein the dosage of the diazo naphthoquinone photosensitizer is 40-60 parts by weight; wherein the content of free cresol in the cresol-type phenolic resin is lower than 2 weight percent, and the alkaline dissolution rate of the cresol-type phenolic resin dissolved in 3.5 to 7 weight percent of tetramethylammonium hydroxide aqueous solution is lower than 285 angstroms / second. The positive photoresist composition provided by the invention has excellent chemical resistance to a polyimide stripping agent, and can specifically improve the protection capability of a photoresist layer to a polyimide layer with low dielectricity, thereby optimizing the process and quality of a patterned polyimide layer.

Description

technical field [0001] The present invention relates to a photoresist composition and its patterning method, in particular to a positive photoresist composition and a method for patterning a polyimide layer using it. Background technique [0002] In the redistribution layer (RDL) process of the semiconductor industry, by coating the polyimide film on the silicon wafer, the originally designed contact position (I / O pad) is passed through the wafer-level metal wiring process And bump process to change its contact position, so that IC can be applied to different component modules. [0003] In the semiconductor process, currently patterning polyimide films can be achieved by dry etching or wet etching methods. Among them, although the dry etching process can use plasma to remove the polyimide film in the predetermined area to achieve the purpose of patterning; but the use of plasma to etch the low dielectric polyimide film will change its electrical properties. nature, and eve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/039G03F7/004G03F7/42
CPCG03F7/039G03F7/004G03F7/42
Inventor 张庭玮鍾明哲
Owner ECHEM SOLUTIONS