Single crystal furnace for InSb crystal growth

A crystal growth and single crystal furnace technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as unpredictable changes in flow state, crystal defects and adverse effects of element doping uniformity, etc., to achieve low The effect of defect density and uniformity of electrical parameters

Inactive Publication Date: 2020-03-24
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] A relatively flat or slightly convex growth interface is an effective way to prepare large-size, high-quality InSb crystals with low defect density and high electrical uniformity. Traditional methods are used to change the convective heat transfer of the melt by changing the crucibl

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  • Single crystal furnace for InSb crystal growth
  • Single crystal furnace for InSb crystal growth
  • Single crystal furnace for InSb crystal growth

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[0016] Hereinafter, exemplary embodiments of the present disclosure will be described in more detail with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0017] The embodiment of the present invention relates to a single crystal furnace for InSb crystal growth, which is used for the control of the InSb crystal growth interface. Provide a specially designed thermal field structure and cooperate with the corresponding movement, the two together form a complete technical solution. It is different from the traditional method that changes the convective heat trans...

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Abstract

The invention discloses a single crystal furnace for InSb crystal growth. The single crystal furnace comprises a backflow heat insulation layer which is arranged above a quartz crucible; and the backflow heat insulation layer is connected to a lifting device through a fixing rod frame. The bottom end of the backflow heat insulation layer inclines towards the direction of InSb crystals in the middle of the quartz crucible at a certain taper angle inclination; the backflow heat insulation layer is used for conducting corresponding position adjustment according to the actual growth interface shape at different growth stages of the InSb crystals under the driving of the lifting device, by directionally shielding or reflecting a certain radiant heat to the grown crystal part in the growth process of the InSb crystals, the thermal field structure of the single crystal furnace is changed; one end of the fixing rod frame is connected with the backflow heat insulation layer and penetrates through the furnace wall of the single crystal furnace, and the other end of the fixing rod frame is connected with the lifting device and used for driving the backflow heat insulation layer to move up anddown under the driving of the lifting device; the lifting device is connected with the backflow heat insulation layer through the fixing rod frame and used for driving the backflow heat insulation layer to move up and down through the fixing rod frame.

Description

technical field [0001] The invention relates to the field of single crystal furnaces, in particular to a single crystal furnace for InSb crystal growth. Background technique [0002] As a III-V compound semiconductor material, InSb has the characteristics of narrow band gap, small electron effective mass, high electron mobility, and stable physical and chemical properties. Because of its intrinsic absorption in the 3-5 μm medium-wave band, InSb-based infrared detectors have extremely high quantum efficiency and responsivity, so InSb has become the material of choice for medium-wave infrared detectors. The rapid development of InSb infrared detectors through unit, multi-element, one-dimensional line array and two-dimensional area array has greatly improved the performance of the infrared system, which has promoted the application of infrared technology in astronomical observation, reconnaissance and surveillance, search and tracking, assisted driving, fire protection and App...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B15/22
CPCC30B15/22C30B29/40
Inventor 柏伟刘江高徐强强刘铭
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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