Preparation and edge cleaning method of solar cell and solar cell

Abstract

The invention discloses a preparation and edge cleaning method of a solar cell. The preparation and edge cleaning method comprises the following steps: preparing a first layer on a substrate; carryingout edge cleaning on the edge of the first layer, removing the film layer of the first edge cleaning area of the edge of the first layer, and then forming a first edge distance on a first residual substrate part between the end part of the first layer and the end part of the substrate; preparing a second layer on the first layer after edge cleaning and the remaining substrate part; cleaning the edge of the second layer, removing the film layer of the second edge cleaning area of the edge of the second layer, and then forming a second edge distance on a second residual substrate part between the end part of the second layer and the end part of the substrate, wherein the width of the second edge distance is smaller than that of the first edge distance. By designing a special edge distance structure and adopting a non-sand-blasting laser or a laser and mechanical scraper mode, edge cleaning of the end part of the cell is realized, the problem of end part lap joint short circuit is avoided, and meanwhile, the precision is relatively high.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a method for preparing and edge-cleaning solar cells. The present application also relates to a solar cell. Background technique [0002] CIGS thin-film solar cells have the advantages of strong light absorption, low manufacturing cost, flexibility, stable power generation, and environmental friendliness. They are one of the most likely materials to replace silicon cells in the future. At present, the highest conversion efficiency in the laboratory has exceeded 22%. Generally, a typical CIGS thin-film battery has the following structure and preparation process: use ordinary soda-lime glass or flexible materials as the substrate, and deposit a layer on the substrate by magnetron sputtering. Mo thin film is used as the back electrode layer, the CIGS absorption layer is prepared by the co-evaporation method or the selenization method after sputtering, the CdS buffer l...

AI Technical Summary

Problems solved by technology

[0005] This application provides a method for the preparation and edge cleaning of solar cells to solve the problem that the existing transparent conductive layer and the back electrode layer are overlapped and short-circuited due to the high energy of the laser and the high heat in the edge cleaning process, which leads to the melting of the film layer.

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