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Method for separating primary silicon from hypereutectic aluminum-silicon alloy

An aluminum-silicon alloy and separation method technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of low separation efficiency, difficult separation of primary silicon, etc. the effect of prolongation

Inactive Publication Date: 2020-04-07
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problems existing in the prior art, the present invention provides a method for separating primary silicon in a hypereutectic aluminum-silicon alloy, which solves the problems of difficult separation of primary silicon from the melt and low separation efficiency during the solidification and refining process of the alloy

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  • Method for separating primary silicon from hypereutectic aluminum-silicon alloy
  • Method for separating primary silicon from hypereutectic aluminum-silicon alloy
  • Method for separating primary silicon from hypereutectic aluminum-silicon alloy

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Embodiment 1

[0021] Embodiment 1: The separation method of primary silicon in hypereutectic aluminum-silicon alloy is as follows:

[0022] (1) Weigh industrial silicon (purity 95%) and pure aluminum (purity 99%) according to Al-45wt%Si alloy composition, use induction heating melting furnace for melting, and cast into rod-shaped ingot with diameter of 10mm after melting, rod-shaped The longitudinal section morphology of the ingot is shown in figure 1 ;

[0023] (2) Place the rod-shaped ingot in a graphite crucible for induction heating zone melting; the melting vacuum in the induction heating zone is less than 10Pa, the zone melting temperature is controlled at 1050±50°C, and the zone melting speed is 3mm / min;

[0024] (3) After the experiment is over, turn off the power supply and servo motor, wait for 10 minutes, and wait for the temperature of the crucible to drop; open the area melting induction furnace to take out the alloy sample; use a wire cutting machine to cut along the longitud...

Embodiment 2

[0027] Embodiment 2: The separation method of the primary silicon crystal in the hypereutectic aluminum-silicon alloy is as follows:

[0028] (1) Weigh industrial silicon (purity 95%) and pure aluminum (purity 99%) according to Al-45wt% Si alloy composition, use induction heating melting furnace for melting, and cast into rod-shaped ingots with a diameter of 10 mm after melting;

[0029] (2) Place the rod-shaped ingot in a graphite crucible for induction heating zone melting, the vacuum degree of the induction heating zone melting is less than 10Pa, the zone melting temperature is controlled at 1050±50°C, and the zone melting speed is 3mm / min;

[0030] (3) After the first zone melting, repeat step (2) twice, the vacuum degree of the induction heating zone is less than 10Pa, the zone melting temperature is controlled at 1050±50°C, and the zone melting speed is 3mm / min;

[0031] (4) After the experiment is over, turn off the power supply and servo motor, wait for 10 minutes, and...

Embodiment 3

[0032] Embodiment 3: The separation method of primary silicon in hypereutectic aluminum-silicon alloy, its specific steps are as follows:

[0033] (1) Weigh industrial silicon (purity 95%) and pure aluminum (purity 99%) according to Al-65wt%Si alloy composition, use induction heating melting furnace for melting, and cast into 10mm rod-shaped ingot after melting;

[0034] (2) Place the rod-shaped ingot in a graphite crucible for induction heating zone melting; the melting vacuum in the induction heating zone is less than 10Pa, the zone melting temperature is controlled at 1200±50°C, and the zone melting speed is 5mm / min;

[0035] (3) After the experiment is over, turn off the power supply and servo motor, wait for 10 minutes, and wait for the temperature of the crucible to drop; open the area melting induction furnace to take out the alloy sample. The sample is cut along the longitudinal section by wire cutting machine, after grinding and polishing, the longitudinal section of ...

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Abstract

The invention discloses a method for separating primary silicon from hypereutectic aluminum-silicon alloy, and the method comprises the following steps of: melting and solidifying the aluminum-siliconalloy by adopting an induction heating zone melting process to realize enrichment of the primary silicon at the bottom of a test sample and achieve the purpose of high-efficiency separating; specifically, industrial silicon and industrial aluminum are adopted as raw materials, an aluminum-silicon alloy cast ingot is prepared, and induction heating zone melting is conducted on the cast ingot through the zone melting process. And after zone melting is finished, by taking out the sample, intercepting a primary silicon enrichment part at the bottom of the sample, and pickling, high-purity siliconcan be recovered. The method solves the problems that the primary silicon is difficult to separate froma melt and the separating efficiency is not high in the alloy solidification refining process, efficient separating of the primary silicon in the aluminum-silicon alloy can be achieved, the diameter and the length of the sample can be enlarged or prolonged according to actual conditions, and themethod is suitable for large-scale production.

Description

technical field [0001] The invention belongs to the technical field of preparing solar-grade polysilicon by metallurgical methods, and in particular relates to a method for separating primary silicon in a hypereutectic aluminum-silicon alloy by adopting a zone smelting process. Background technique [0002] Solar-grade polysilicon is the main raw material for silicon solar cells, and its preparation process has always been the focus of research in the field of solar energy. Among the many methods of metallurgical silicon purification to prepare solar-grade polysilicon, Al-Si alloy solidification and refining method has attracted extensive attention because of its advantages such as low melting temperature and high impurity removal efficiency. However, the primary silicon in the solid Al-Si alloy is diffusely distributed, and the recovery of silicon is difficult and the recovery efficiency is not high. How to separate and improve the recovery efficiency of primary silicon is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/08C30B29/06
CPCC30B28/08C30B29/06
Inventor 金青林王顺金王栋栋刘恩典
Owner KUNMING UNIV OF SCI & TECH