Thin film transistor, manufacturing method thereof and thin film transistor array

Abstract

The invention provides a thin film transistor, a manufacturing method thereof and a thin film transistor array. The manufacturing method comprises the following steps: forming a gate insulating layeron a gate electrode layer; continuously depositing a metal oxide semiconductor layer and an etching protection layer on the gate insulation layer; forming a metal electrode layer on the gate insulation layer and the etching protection layer; etching the metal electrode layer to form a source electrode layer and a drain electrode layer; and etching the etching protection layer to expose the metal oxide semiconductor layer. According to the invention, the etching protection layer is formed on the metal oxide semiconductor layer; when the metal electrode layer and the ITO layer are etched, the metal oxide semiconductor layer is protected by etching the protective layer, so that the metal oxide semiconductor layer is prevented from being etched by etching liquid to influence the performance ofthe thin film transistor, the protective layer does not need to be additionally arranged when the metal oxide semiconductor layer is protected, the manufacturing method is simple, and the cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and in particular relates to a thin film transistor, a manufacturing method thereof and a thin film transistor array. Background technique [0002] With the development of display technology, various display devices such as liquid crystal display (LCD) devices, organic electroluminescent display (OLED) devices, or inorganic electroluminescent display (Mini-LED, Micro-LED) devices have been widely used. Each liquid crystal pixel in a liquid crystal display (LCD) device is driven by a thin-film transistor (TFT) integrated behind the pixel, so that high-speed, high-brightness, high-contrast display information can be achieved, which is currently the best One of the color display devices. [0003] The TFT includes a semiconductor layer, which has a source / drain region doped with a high-concentration dopant and a channel region formed between the source / drain regions, a gate ele...

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Problems solved by technology

[0005] In view of the deficiencies in the above-mentioned prior art, the purpose of the present invention is to provide a thin film transistor and its manufacturing method and a thin film transistor array, which overcome the problem of the etchant when etching multiple source-drain electrodes in the prior art. Defects that can destroy the metal oxide semiconductor of IGZO, thereby affecting the performance of the entire TFT

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