Method for manufacturing phase shift mask for integrated circuit
A technology of phase shift mask and manufacturing method, which is applied to the photoplate making process of the patterned surface, the original for photomechanical processing, optics, etc., and can solve the problem that the phase angle can only be scrapped and so on.
Pending Publication Date: 2020-04-14
WUXI ZHONGWEI MASK ELECTRONICS
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Problems solved by technology
[0011] The technical problem to be solved by the present invention is to overcome the disadvantage of measuring the phase angle of the mask after the existing phase shift mask is manufactured, and it can only be scrapped if the phase angle exceeds the specification requirement, and to provide a method for reducing the Scrap integrated circuit phase shift mask manufacturing method
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[0024] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.
[0025] like Figures 1 to 5 As shown in the figure, a method for manufacturing a phase shift mask for an integrated circuit, which converts the pattern data into a format that can be recognized by a mask exposure equipment according to a pattern designed by a customer, and uses a mask exposure machine to expose a mask with a photosensitive material. Substrate, the process of producing light-transmitting and non-light-transmitting logic patterns on the surface through the development and etching process; including the following steps in turn: first exposure, baking, first development, first chrome etching, first time Debonding, phase shift layer etching, first glue coating, monit...
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The invention discloses a method for manufacturing a phase shift mask for an integrated circuit. Graph data is converted into a format which can be identified by mask exposure equipment according to agraph designed by a customer, exposure to a mask substrate attached with a photosensitive material is achieved by using a mask exposure machine, and light-transmitting and light-proof logic graphs are generated on a surface through a developing and etching process. The method successively comprises the following steps of first exposure, baking, first development, first chromium etching, first photoresist removal, phase shift layer etching, first gluing, monitoring pattern exposure, secondary development, secondary chromium etching, secondary photoresist removal, pattern phase angle monitoring, evaluation and calculation of phase shift layer etching time, secondary gluing, secondary exposure, third development, third chromium etching, third photoresist removal, cleaning, pattern detection, film pasting, particle detection, packaging and shipment. According to the method, scrapping caused by a fact that a phase angle exceeds a specification requirement after main pattern metal chromiumis removed through final exposure in an existing process can be overcome.
Description
technical field [0001] The invention relates to a method for manufacturing a phase shift mask for an integrated circuit. Background technique [0002] In recent years, with the rapid development of semiconductor manufacturing technology, the size of devices has been shrinking, and the integration of devices has become higher and higher. According to Moore's Law, the number of transistors will double every 18 months, which puts forward higher requirements for lithography technology. . When the process node reaches 0.18 micron or higher, the beam passes through the reticle and produces a significant diffraction effect. For the same light source, when the size of the reticle they pass through is smaller, the diffraction effect is more obvious. As a result, the superposition of light intensity distribution is obvious, and sufficient energy intensity contrast cannot be generated to allow the photoresist on the wafer to form the desired pattern through reaction and development. ...
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IPC IPC(8): G03F1/26G03F1/72
CPCG03F1/26G03F1/72
Inventor 刘维维尤春刘浩
Owner WUXI ZHONGWEI MASK ELECTRONICS