Bulk acoustic wave resonator, filter, and electronic device
A bulk acoustic wave resonator and resonator technology, applied in the direction of electrical components, impedance networks, etc., can solve the limited and insufficient improvement of the energy leakage problem at the edge of the effective area of the resonator.
Active Publication Date: 2020-04-14
TIANJIN UNIV +1
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Problems solved by technology
However, the above-mentioned traditional gap structure cannot sufficiently improve the energy leakage problem at the edge of the effective area of the resonator, so the extent to which Rp can be improved is also limited.
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[0041] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.
[0042] figure 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Such as figure 2 As shown, the BAW resonator includes a bottom electrode, a piezoelectric layer, and a top electrode, and the top electrode may be covered with a passivation layer. exist figure 2 In , the letter O indicates the center of the effective area of the resonator.
[0043] In addition, in ...
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The present invention relates to a bulk acoustic wave resonator, and the resonator comprises a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein anoverlapping area of the piezoelectric layer, the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective areaof the resonator; an additional structure arranged on the same layer as the top electrode, wherein the additional structure and the top electrode are provided with a gap for separating the two in theradial direction; and an insertion layer arranged along an edge of the effective region. The insertion layer includes a first insertion portion which is disposed below the additional structure in a thickness direction of the resonator, and the first insertion portion is overlapped with the additional structure in a plan view of the resonator; and the first insertion portion is formed of air or a dielectric material. The invention also relates to a filter and an electronic device.
Description
technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter, and an electronic device having one of the above components. Background technique [0002] Bulk acoustic wave filters have the advantages of low insertion loss, high square factor, and high power capacity. Therefore, they are widely used in contemporary wireless communication systems and are important components that determine the quality of radio frequency signals entering and leaving the communication system. The performance of a bulk acoustic wave filter is determined by the bulk acoustic wave resonator that constitutes it. For example, the resonant frequency of the bulk acoustic wave resonator determines the operating frequency of the filter, the effective electromechanical coupling coefficient determines the bandwidth of the filter, and the quality factor determines the filter insertion. loss. When the filter ...
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IPC IPC(8): H03H9/25H03H3/08
CPCH03H9/25H03H3/08
Inventor 杨清瑞庞慰张孟伦
Owner TIANJIN UNIV