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Manufacturing method of silicon-based optical waveguide device

A silicon-based optical waveguide and manufacturing method technology, applied in the directions of optical waveguides, light guides, optical components, etc., can solve the problems of large coupling loss and high device integration, and achieve the effect of reducing the difficulty of etching and simplifying the etching menu.

Active Publication Date: 2020-04-28
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

While the very small size of the silicon-based optical waveguide brings high device integration, it also brings a serious problem—the coupling loss between the silicon-based optical waveguide and the optical fiber is very large. A key problem that interconnection urgently needs to solve

Method used

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  • Manufacturing method of silicon-based optical waveguide device
  • Manufacturing method of silicon-based optical waveguide device
  • Manufacturing method of silicon-based optical waveguide device

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Embodiment

[0037] This embodiment provides a method for manufacturing a silicon-based optical waveguide device. The method for manufacturing a silicon-based optical waveguide device includes the following steps:

[0038] forming an SOI substrate, the SOI substrate comprising a silicon substrate, a buried oxide layer, and a top silicon layer stacked sequentially from bottom to top;

[0039] Etching the top silicon layer to form a waveguide structure and a first groove, the depth of the first groove is the same as the thickness of the top silicon layer;

[0040] An upper cladding layer is formed on the upper surface of the waveguide structure and the upper surface of the buried oxide layer, and the material of the upper cladding layer is the same as that of the buried oxide layer;

[0041] Etching the upper cladding layer and the buried oxide layer to form a second groove, the depth of the second groove is the thickness of the upper cladding layer, the thickness of the top silicon layer an...

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Abstract

The invention discloses a manufacturing method of a silicon-based optical waveguide device. The method comprises the steps: forming an SOI substrate, wherein the SOI substrate includes a silicon substrate, a buried oxide layer and a top silicon layer which are sequentially stacked from bottom to top; etching the top silicon layer to form a waveguide structure and a first groove; forming an upper cladding on an upper surface of the waveguide structure and the upper surface of the buried oxide layer, wherein a material of the upper cladding is the same as that of the buried oxide layer; etchingthe upper cladding and the buried oxide layer to form a second groove; and etching the silicon substrate to form a third groove, wherein a depth of the third groove is less than a thickness of the silicon substrate, and a horizontal projection of the third groove is superposed with the horizontal projection of the second groove. According to the manufacturing method of the silicon-based optical waveguide device provided by the invention, when a deep groove structure for end surface coupling is formed, an etching process only needs to be switched once so that an etching menu is simplified, andetching difficulty and a requirement to the thickness of photoresist are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a silicon-based optical waveguide device. Background technique [0002] With the continuous development of silicon-based photonic chip integration technology, the use of photonic chips to realize short-distance optical communication between chips or within chips is getting closer and closer to reality. Silicon on Insulator (SOI, Silicon On Insulator) has very good optical characteristics, and because silicon has a very large refractive index difference with silicon dioxide or air, silicon-based optical waveguides have a very strong ability to confine light fields, so silicon Basic optical waveguides can be fabricated to very small sizes. While the very small size of the silicon-based optical waveguide brings high device integration, it also brings a serious problem—the coupling loss between the silicon-based optical waveguide and the optical fib...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/12G02B6/136
CPCG02B6/12G02B6/136G02B2006/12038G02B2006/12176G02B2006/12188
Inventor 张鹏唐波李志华李彬刘若男
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI