UHF resonator

Abstract

An ultra-high frequency resonator is disclosed, comprising a substrate with a cavity, a piezoelectric layer is provided on the surface of the substrate, and a plurality of strip-shaped positive electrodes and a plurality of strip-shaped negative electrodes are arranged on the piezoelectric layer , the plurality of strip-shaped positive electrodes and the plurality of strip-shaped negative electrodes are radially distributed on the piezoelectric layer, wherein the strip-shaped positive electrodes and the strip-shaped negative electrodes are alternately distributed, and two adjacent The distance between the strip-shaped positive electrode and the strip-shaped negative electrode is at least one wavelength. The novel ultra-high frequency resonator disclosed in the present disclosure not only satisfies the frequency range above 4.5G, but also has an electromechanical coupling coefficient as high as 30%, which is far greater than that of bulk acoustic wave resonators and surface acoustic wave resonators, and satisfies high frequencies for communication, large bandwidth requirements.

Description

technical field [0001] The present disclosure relates to the field of MEMS resonators, in particular ultrahigh frequency bulk acoustic wave resonators. Background technique [0002] The rapid development of wireless and mobile communication systems is driving rapid innovation in component performance and system integration technologies. In order to achieve faster signal processing and reduce the complexity of integration, micro-electromechanical system (MEMS) resonators that are miniaturized and compatible with CMOS technology have become the core devices of the new generation, so high-performance MEMS resonator technology is used as an advanced wireless The fundamental components of the RF front-end of communication systems are in high demand. [0003] At present, RF filters are generally built by surface acoustic wave resonators (SAW) and film bulk acoustic resonators (FBAR), but for higher frequency filters, the interdigital electrodes of surface acoustic wave resonators...

AI Technical Summary

Problems solved by technology

[0003] At present, RF filters are generally built by surface acoustic wave resonators (SAW) and film bulk acoustic resonators (FBAR), but for higher frequency filters, the interdigital electrodes of surface acoustic wave resonators require smaller finger widths. Too small electrode width will increase the loss of energy, affect the power handling capacity of the resonator, and increase the difficulty of processing; while thin film bulk acoustic resonators require thinner piezoelectric films in high-frequency applications, and thinner films are manufactured Difficult with increased pseudo-patterns

[0004] There is no resonator in the current market that satisfies both high frequency (above 4.5GHz) and large bandwidth (above 30%)

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