Semiconductor device manufacturing method and semiconductor device

Abstract

The embodiment of the invention provides a manufacturing method of a semiconductor device and the semiconductor device. The method of manufacturing a device includes forming a plurality of stacks of alternating layers on a substrate, constructing a plurality of nanosheets from the plurality of stacks of alternating layers, and forming a plurality of gate dielectrics over the plurality of nanosheets, respectively. The method allows for the modulation of nanosheet width, thickness, spacing, and stack number and can be employed on single substrates. This design flexibility provides for design optimization over a wide tuning range of circuit performance and power usage.

Description

technical field [0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device, in particular to a method for manufacturing a gate structure. Background technique [0002] Semiconductor devices are used in a large number of electronic devices, such as computers, cell phones, and other devices. The semiconductor device includes an integrated circuit formed on a semiconductor wafer, and various forms of thin film materials are deposited on the semiconductor wafer, and the thin film materials are patterned to form the integrated circuit. Integrated circuits include field-effect transistors (field-effect transistors, FETs) such as metal oxide semiconductor transistors. [0003] One of the goals of the semiconductor industry is to continually shrink the size and increase the speed of a single field effect transistor. To achieve these goals, fin field effect transistors (finFETs), multiple gate transistors (multiple gate transistors), and...

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Problems solved by technology

However, even this new device structure faces many new challenges as the size continues to shrink

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