Low-loss radio frequency vertical electrical connection structure and manufacturing method with built-in cooling cavity

Abstract

Embodiments of the present invention relate to the technical field of semiconductors, in particular to a low-loss radio-frequency vertical electrical connection structure and a manufacturing method with a built-in cooling cavity. A low-loss radio frequency vertical electrical connection structure with a built-in heat dissipation cavity, comprising: a first part and a second part arranged vertically and symmetrically in the upper and lower layers; the first part includes: a silicon substrate with a groove; A through-silicon via TSV is provided at the bottom of the groove; the through-silicon via TSV is a cylindrical structure; it includes: a copper core 3, an inner silicon pillar 4, a copper shielding cylinder 5 and an outer silicon pillar 6; the inner silicon pillar 4 wraps the copper core 3; The grooves in the first part and the grooves in the second part form a closed cooling medium chamber to store the cooling medium; and the TSVs in the first part and the TSVs in the second part are connected in one-to-one correspondence. The invention uses a cooling medium to cool the heat dissipation cavity embedded in the silicon substrate, thereby improving the heat dissipation function. The signal loss of the copper core 3 can be reduced by arranging the outer copper shielding cylinder 5 .

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, in particular to a low-loss radio-frequency vertical electrical connection structure and a manufacturing method with a built-in cooling cavity. Background technique [0002] BACKGROUND OF THE INVENTION In recent years, with the rapid progress of integrated circuit package design, integrated circuits have also made great progress in terms of integration, and their functions have become more and more abundant. For the new applications that are currently emerging, higher requirements are put forward for chip packaging. The current packaging technology chip stacking transmission signal loss is relatively large; the heat generation will increase after chip stacking, but the heat dissipation area does not increase relatively, so the heat generation density is greatly increased. ; Although the multi-chip package still retains the original heat dissipation area, due to the in...

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Problems solved by technology

For the new applications that are currently emerging, higher requirements are put forward for chip packaging. The current packaging technology chip stacking transmission signal loss is relatively large; the heat generation will increase after chip stacking, but the heat dissipation area does not increase relatively, so the heat generation density is greatly increased. ; Although the multi-chip package still retains the original heat dissipation area, due to the interconnection of heat sources, the thermal coupling is enhanced, resulting in more serious thermal problems; the passive devices embedded in the substrate also have certain heating problems, due to the organic substrate or The poor heat dissipation of the ceramic substrate will also cause serious thermal problems; due to the shrinkage of the package volume and the increase of the assembly density, the heat dissipation is not easy to solve

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