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Film forming device and method for forming metal film using the same

A film-forming device and metal film technology, applied in electrolytic components, electrolytic processes, cells, etc., can solve problems such as low current efficiency and achieve the effect of high current efficiency

Inactive Publication Date: 2020-06-26
TOYOTA JIDOSHA KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the research of the present inventors, there is a problem that the current efficiency is low in the solid-phase electrodeposition method using such a film

Method used

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  • Film forming device and method for forming metal film using the same
  • Film forming device and method for forming metal film using the same
  • Film forming device and method for forming metal film using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～5

[0058] (1) Preparation of nickel SED substrate

[0059] A copper sputtering substrate in which a copper sputtering film was formed on an AlSi substrate was prepared. A nickel film was formed on the copper sputtering substrate by solid phase electrodeposition. The conditions of solid-phase electrodeposition are as follows. In addition, the nickel film-forming region was carried out by disposing a polyimide tape (Kapton adhesive tape: 650R#25, manufactured by Teraoka Seisakusho Co., Ltd.) with an opening of 10×10 mm on the copper sputtering substrate. divided. The thickness of the nickel film formed on the copper sputtering substrate by the solid phase electrodeposition method was 4 μm. The nickel solid-phase electrodeposition (SED) substrate obtained as described above was used as a base material for forming a tin film.

[0060] Anode: nickel porous body

[0061] Cathode: copper sputtered substrate

[0062] Solid electrolyte membrane: Nafion 117 (manufactured by DuPont) ...

Embodiment 6～10

[0082] (1) Preparation of electrolyte solution (nickel solution) containing nickel ions

[0083] 222 g of nickel chloride hexahydrate and 124 g of nickel acetate tetrahydrate were dissolved in ion-exchanged water to make the total amount 950 mL. The pH of this solution was measured, and acetic acid was dripped so that pH might be in the range of 3.85-3.95. In addition, it diluted with ion-exchanged water so that the total amount would be 1000 mL. The resulting solution was used as a nickel solution.

[0084] (2) Preparation of porous membrane

[0085] For each example, a porous membrane (manufactured by TORAY) composed of a polyolefin chain having a pore diameter described in Table 2 was prepared. The ratio of the atomic number of oxygen and carbon measured by the X-ray photoelectron spectrometry apparatus (ULVAC-PHI make PHI-5800) of each porous film was 0.01-0.02. The porous membrane was soaked in ethanol, whereby ethanol was impregnated into pores of the porous membrane...

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Abstract

The invention provides a film forming device capable of forming a metal film in relatively high current efficiency, and a metal film forming method using the same. The film forming device 100 for forming a metal film at a high current efficiency and a method for forming the metal film using the film forming device 100 are provided. The film forming device 100 to form the metal film includes an anode 20, a cathode 30, a porous membrane 60 disposed between the anode 20 and the cathode 30 to be capable of contacting the cathode 30, a solution container 50 defining a solution containing space 55 between the anode 20 and the porous membrane 60, and a power supply 40 applying a voltage between the anode 20 and the cathode 30. The porous membrane 60 is composed of a polyolefin chain without an ion-exchange functional group.

Description

technical field [0001] The present invention relates to a film forming apparatus for forming a metal film and a method for forming a metal film using the film forming apparatus. Background technique [0002] Conventionally, a plating method has been widely used as a method for forming a metal film such as tin or nickel. However, the plating method requires washing with water after the plating treatment, and thus requires treatment of waste liquid. Therefore, Patent Document 1 describes a method called solid-phase electrodeposition (SED) as a method of forming a metal film. In the solid-phase electrodeposition method described in Patent Document 1, a solid electrolyte membrane is disposed between an anode and a cathode (substrate), an aqueous solution containing metal ions is disposed between the anode and the solid electrolyte membrane, and the solid electrolyte membrane is brought into contact with the substrate. , and a voltage is applied between the anode and the cathod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D17/00C25D17/10C25D21/02C25D3/32C25D3/12
CPCC25D3/12C25D3/32C25D17/00C25D17/002C25D17/10C25D21/02C25D3/30C25D5/12C25D17/14C25D5/06
Inventor 饭坂浩文
Owner TOYOTA JIDOSHA KK
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