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High-electron-mobility transistor based on MgZnO/ZnO and preparation method thereof

A technology with high electron mobility and transistors, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems that the performance indicators cannot meet the actual application requirements, unfavorable industrial applications, and high production costs, so as to ensure performance and purchase Effect of cost reduction and production cost reduction

Pending Publication Date: 2020-06-30
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the immaturity of the existing zinc oxide-based transistor technology, the performance indicators cannot meet the needs of practical applications, so the current high electron mobility transistor technology is based on gallium nitride (GaN) and its alloy materials, such as AlGaN
However, in the preparation process of AlGaN transistors, gallium (Ga), a rare and weakly toxic metal, needs to be used, resulting in high production costs and relatively low practicability; more importantly, under standard conditions, the metal gallium The saturated vapor pressure is low, and a high heating temperature is required in the process of preparing materials, usually close to 1000 ° C, so there is a large energy consumption in the manufacturing process, which is not conducive to large-scale industrial applications

Method used

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  • High-electron-mobility transistor based on MgZnO/ZnO and preparation method thereof
  • High-electron-mobility transistor based on MgZnO/ZnO and preparation method thereof
  • High-electron-mobility transistor based on MgZnO/ZnO and preparation method thereof

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Effect test

Embodiment 1

[0043] This embodiment provides a high electron mobility transistor based on MgZnO / ZnO, its structure is as follows figure 1As shown, it includes: a substrate 1, a ZnO channel layer 2, a MgZnO gradient barrier layer 3, a doped barrier layer 4 and a dielectric layer 5 arranged from bottom to top;

[0044] a two-dimensional electron gas between the ZnO channel layer and the MgZnO graded barrier layer;

[0045] a source 8 and a drain 6 located at both ends of the surface of the dielectric layer;

[0046] A gate 7 located between the source and drain, penetrating through the dielectric layer, and embedded in the doped barrier layer at the bottom.

[0047] Specifically, the substrate is silicon or sapphire;

[0048] At the heterojunction interface, close to the intrinsic semiconductor side, an electronic potential well (approximately triangular) is formed, and the electrons in the potential well are two-dimensional electron gas (2DEG) with high mobility;

[0049] The bottom of t...

Embodiment 2

[0056] This embodiment provides a method for preparing the MgZnO / ZnO-based high electron mobility transistor described in Embodiment 1, including:

[0057] (1) Molecular Beam Epitaxy (MBE) method is used to deposit ZnO thin film on silicon Si substrate to form ZnO channel layer; wherein, the temperature of Zn beam source furnace is 345°C, and the generation power of oxygen plasma is And the flow rate is 300W and 2SCCM (Standard-state Cubic Centimeter per Minute, standard-state millimeter per minute), the substrate temperature is 400 ° C, and the thickness is 1 μm;

[0058] (2) Using the MBE method, epitaxy on the ZnO layer of the channel layer to form a MgZnO slow-varying barrier layer; wherein, the temperature of the Zn beam source furnace is 322 ° C, the temperature of the Mg source is 308 ° C, the generation power of oxygen plasma and The flow rates are 340W and 2.6SCCM respectively, the substrate temperature is 400°C, and the thickness is 4nm;

[0059] (3) An N-type doped...

Embodiment 3

[0063] This embodiment provides a method for preparing the MgZnO / ZnO-based high electron mobility transistor described in Embodiment 1, and the specific implementation steps include:

[0064] (1) Deposit a ZnO film on a sapphire substrate by Molecular Beam Epitaxy (MBE) to form a ZnO channel layer; wherein, the temperature of the Zn beam source furnace is 345°C, and the oxygen plasma The generated power and flow rate are 300W and 2SCCM (Standard-state Cubic Centimeter per Minute), the substrate temperature is 400°C, and the thickness is 1μm;

[0065] (2) Using the MBE method, epitaxy on the ZnO layer of the channel layer to form a MgZnO slow-varying barrier layer; wherein, the temperature of the Zn beam source furnace is 320 ° C, the temperature of the Mg source is 310 ° C, the generation power of oxygen plasma and The flow rates are 340W and 2.6SCCM respectively, the substrate temperature is 400°C, and the thickness is 4nm;

[0066] (3) An N-type doped MgZnO barrier layer is...

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Abstract

The invention relates to a high-electron-mobility transistor based on MgZnO / ZnO and a preparation method thereof. The high-electron-mobility transistor comprises a substrate, a ZnO channel layer, an MgZnO graded barrier layer, a doped barrier layer and a dielectric layer which are arranged from bottom to top, two-dimensional electron gas between the ZnO channel layer and the MgZnO graded barrier layer, a source electrode and a drain electrode arranged on the surface of the dielectric layer, and a grid electrode that is arranged between the source electrode and the drain electrode and passes through the dielectric layer, and has the bottom embedded into the doped barrier layer. The invention provides a high-electron-mobility transistor based on a wide bandgap ZnO material, which has relatively ideal semiconductor performance; and energy consumption and raw material procurement cost are reduced substantially.

Description

technical field [0001] The invention relates to a high electron mobility transistor based on a MgZnO / ZnO heterojunction and a preparation method thereof, belonging to the technical field of semiconductor materials. Background technique [0002] High Electron Mobility Transistor (HEMT), also known as Modulation-doped FET (MODFET), is a power electronic device based on wide bandgap semiconductor materials; it utilizes two Materials with different energy gaps form heterojunctions, and use the polarization electric field at the interface to effectively modulate the band structure and charge distribution of wide-bandgap semiconductors, resulting in the formation of high electron mobility transistors without intentional doping Two-dimensional electron gas (2DEG) with high surface density. [0003] Unlike metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), high electron mobility transistors do not need to dope materials, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/22H01L29/225H01L29/778H01L21/34
CPCH01L29/7787H01L29/225H01L29/22H01L29/66969
Inventor 刘利书冯宇翔
Owner GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD