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Semiconductor device

A semiconductor, n-type semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, output power conversion devices, etc., to achieve the effect of excellent semiconductor characteristics

Pending Publication Date: 2020-06-30
FLOSFIA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is not known that Ir 2 o 3 used in p-type semiconductors, but recently the applicant in this case has studied the use of Ir 2 o 3 Developed as a p-type semiconductor

Method used

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  • Semiconductor device
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Examples

Experimental program
Comparison scheme
Effect test

reference example 1

[0100] Hereinafter, a production example of a p-type oxide semiconductor film applicable to the present invention will be described.

[0101] 1. Film forming device

[0102] use figure 1 The film forming apparatus used in this example will be described. figure 1 The film forming apparatus 1 of the present invention is provided with: a quartz cylinder 2 connected to a carrier gas supply source; and a quartz raw material installation table 4 installed in the quartz cylinder 2; A heater 3 is provided in a cylindrical shape on the outside of the quartz tube 2 around the raw material installation table, and the raw material 5 can be heated. In addition, a quartz substrate stage is provided inside the quartz cylinder 2 as a stage 7, and the stage 7 can be adjusted so that it is within the crystal growth temperature.

[0103] 2. Preparation for film formation

[0104] IrO is placed on the raw material setting table 4 2 Powder was used as a raw material 5 , and a sapphire substra...

reference example 1

[0111] 1. Film forming device

[0112] use figure 2 The atomization CVD apparatus used in this comparative reference example will be described. Atomization CVD apparatus 19 has: carrying table 21, carries substrate 20; Carrier gas supply means 22a, supplies carrier gas; ) supply means 22b, supply carrier gas (dilution); flow regulating valve 23b, in order to regulate the flow rate of the carrier gas that is sent from carrier gas (dilution) supply means 22b; mist generation source 24, receive raw material solution 24a; Container 25, pack There are water 25a; ultrasonic vibrating element 26 installed on the bottom of container 25; The stage 21 is made of quartz, and the surface on which the substrate 20 is placed is inclined with respect to the horizontal plane. Both the supply pipe 27 and the stage 21 serving as the film formation chamber are made of quartz, thereby preventing impurities from the device from being mixed into the film formed on the substrate 20 .

[0113] 2...

reference example 2

[0120] (Reference Example 2 and Comparative Reference Example 2)

[0121] Except having lengthened the film-forming time, the films were obtained in the same manner as in Reference Example 1 and Comparative Reference Example 1, respectively, and were used as Reference Example 2 and Comparative Reference Example 2, respectively. Next, the cross section of the obtained film was observed using SEM. The results are shown in Image 6 . Such as Image 6 It was clearly found that the film obtained in Reference Example 2 was in the form of a film, whereas the film obtained in Comparative Reference Example 2 grew in the shape of needles and did not become a homogeneous film.

[0122] From the results of the reference example and the comparative reference example, the p-type oxide semiconductor film suitable for the present invention is industrially useful because of its excellent film quality such as surface smoothness and crystallinity. The characteristics are also excellent.

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Abstract

Provided is a semiconductor device capable of achieving excellent semiconductor characteristics without impairing semiconductor characteristics even in cases of using, for example, a high-voltage low-loss n-type semiconductor (such as gallium oxide) having a dielectric breakdown field intensity that is considerably higher than that of SiC. Provided is a semiconductor device comprising at least: agate electrode; and a channel layer in which a channel is formed on a side wall of the gate electrode directly or with another layer therebetween. A portion or the entirety of the channel layer includes a p-type oxide semiconductor (such as iridium oxide).

Description

technical field [0001] The present invention relates to semiconductor devices and systems using p-type oxide semiconductors. Background technique [0002] Gallium oxide (Ga 2 o 3 ) semiconductor device has attracted attention, and it is expected that it can be applied to a power semiconductor device such as an inverter. Moreover, it is expected to be applied to light-emitting devices such as LEDs and sensors due to its wide energy gap. According to Non-Patent Document 1, this gallium oxide can control the energy gap by mixing with indium or aluminum alone or in combination, and constitutes an attractive material system as an InAlGaO-based semiconductor. Here InAlGaO semiconductor, to represent In X al Y Ga Z o 3 (0≦X≦2, 0≦Y≦2, 0≦Z≦2, X+Y+Z=1.5~2.5), which can be summarized as the same material system containing gallium oxide. [0003] Next, gallium oxide-based p-type semiconductors have been studied in recent years. For example, Patent Document 1 describes that if Mg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/12H01L21/28H01L21/329H01L21/336H01L21/337H01L21/338H01L29/41H01L29/47H01L29/739H01L29/78H01L29/808H01L29/812H01L29/872
CPCH01L29/47H01L29/872H01L21/28H01L21/02483H01L21/02576H01L21/02628H01L21/02631C23C16/4481C23C16/40H01L21/02565H01L21/02579H01L29/7397H01L29/7813H01L29/66969H01L29/41766H01L29/1095H01L29/24H01L29/04H01L29/7806H01L21/02414H01L29/417H01L29/0834H01L21/443H01L21/465H02M3/33576
Inventor 松田时宜杉本雅裕四户孝
Owner FLOSFIA