Quantum dot light-emitting diode and its preparation method
A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, organic semiconductor devices, electric solid-state devices, etc., can solve problems such as the unsatisfactory effect of electron transport in the electron transport layer, and achieves favorable electron transport and simple preparation method. , Improve the effect of luminous efficiency
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[0019] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, including the following steps:
[0020] S01: Provide the substrate;
[0021] S02: preparing an electron transport layer on the substrate, the electron transport layer comprising a stacked zinc sulfide layer and a [6,6]-phenyl-C61-butyric acid layer.
[0022] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention is simple and low in cost, and is suitable for large-scale and large-scale production. The electron transport layer in the finally prepared device includes a stacked zinc sulfide layer and [6,6]-benzene The base-C61-butyric acid layer, the zinc sulfide layer / [6,6]-phenyl-C61-butyric acid layer stack structure of the electron transport layer is conducive to electron transport, thereby improving the luminous efficiency and performance of the device.
[0023] There are variou...
Embodiment 1
[0050] Taking the use of zinc chloride, amine sulfide, ethanol, potassium hydroxide, and PCBM as examples for a detailed introduction.
[0051] 1) First, put an appropriate amount of zinc chloride and 1g of amine sulfide into 50ml of water, wherein the molar ratio of zinc: sulfur is about 1:1. Then, after being completely dissolved, it was transferred to a hydrothermal reaction kettle, reacted at 200°C for 24 hours, and cooled and washed (washed twice with water and once with absolute ethanol). Then dry at 50 °C to prepare the ZnS precursor. Subsequently, the precursor was heated to 800 °C for 5 h under Ar atmosphere. Dissolve the calcined product in 10ml of ethanol and disperse it ultrasonically to form a ZnS solution.
[0052] 2) Disperse an appropriate amount of PCBM in 10ml of ethanol, add a solution of potassium hydroxide dissolved in 10ml of ethanol (the molar ratio of sodium hydroxide to PCBM is 1-1.5:1, pH=12), stir at 70°C for 2h, A PCBA solution is formed.
[005...
Embodiment 2
[0055] Taking zinc acetate, thiourea, methanol, ethanolamine, and PCBM as examples to introduce in detail.
[0056] 1) First, put an appropriate amount of zinc acetate and 1g of thiourea into 50ml of water, wherein the molar ratio of zinc: sulfur is about 1:1. Then, after being completely dissolved, it was transferred to a hydrothermal reaction kettle, reacted at 200°C for 24 hours, and cooled and washed (washed twice with water and once with absolute ethanol). Then dry at 50 °C to prepare the ZnS precursor. Subsequently, the precursor was heated to 800 °C for 5 h under Ar atmosphere. Dissolve the calcined product in 10ml of methanol and disperse it ultrasonically to form a ZnS solution.
[0057] 2) Disperse an appropriate amount of PCBM in 10ml of methanol, add a solution of ethanolamine dissolved in 10ml of methanol (the molar ratio of ethanolamine to PCBM is 1-1.5:1, pH=12), and stir at 60°C for 2 hours to form a PCBA solution.
[0058] 3) Finally, on the treated substra...
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