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Composite thin film, quantum dot light-emitting diode and preparation method thereof

A technology of quantum dot light emission and composite thin film, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of complicated and difficult development, and achieve the effect of expanding the scope of application

Active Publication Date: 2022-01-18
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such development is very difficult and complicated

Method used

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  • Composite thin film, quantum dot light-emitting diode and preparation method thereof
  • Composite thin film, quantum dot light-emitting diode and preparation method thereof
  • Composite thin film, quantum dot light-emitting diode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0094] Embodiment 1: FTS surface treatment graphene quantum dots, improve work function

[0095] Prepare the graphene quantum dot solution: dissolve the graphene quantum dots in ethanol at a concentration of 10 mg / ml;

[0096] Preparation of graphene quantum dot film: deposit graphene quantum dot solution on the substrate, then bake at 70°C for 1 hour;

[0097] Put the above substrate into a vacuum environment for 1 hour, and then put it into a nitrogen environment for standby;

[0098] Prepare FTS solution: Dissolve FTS in n-hexane to a concentration of 0.5 mg / ml;

[0099] Immerse the substrate deposited with the graphene quantum dot film in the above-mentioned FTS solution for two minutes to fully react and combine the tridecafluoro group with the hydroxyl group of the graphene quantum dot;

[0100] Two minutes later, the substrate was taken out, and the surface of the graphene quantum dot film was cleaned with n-hexane solvent, and then baked at 120° C. for half an hour. ...

Embodiment 2

[0101] Embodiment 2: APTS surface treatment graphene quantum dots, reduce work function

[0102] Prepare the graphene quantum dot solution: dissolve the graphene quantum dots in ethanol at a concentration of 10 mg / ml;

[0103] Preparation of graphene quantum dot film: deposit graphene quantum dot solution on the substrate, then bake at 70°C for 1 hour;

[0104] Put the above substrate into a vacuum environment for 2 hours, and then put it into a nitrogen environment for standby;

[0105] Prepare APTS solution: Dissolve APTS in n-hexane to a concentration of 0.5 mg / ml;

[0106] Immerse the substrate deposited with the graphene quantum dot film in the above-mentioned APTS solution for two minutes to fully react and combine the amino groups with the epoxy groups of the graphene quantum dots;

[0107] Two minutes later, the substrate was taken out, and the surface of the graphene quantum dot film was cleaned with n-hexane solvent, and then baked at 120° C. for half an hour.

Embodiment 3

[0108] Embodiment 3: Apply the graphene quantum dots of FTS treatment and the graphene quantum dots of APTS treatment respectively as hole transport layer and electron transport layer, prepare quantum dot light-emitting diode

[0109] Use transparent conductive film ITO as the anode, 50nm thick;

[0110] In the air environment, deposit PEDOT:PSS on the anode as a hole injection layer by solution method, with a thickness of 30nm, and anneal in air at 150°C for 10 minutes;

[0111] In a nitrogen environment, use solution method to deposit graphene quantum dots on the hole injection layer as a hole transport layer, with a thickness of 30nm, anneal at 70°C for 1 hour in a nitrogen environment, then immerse the substrate in the FTS solution, and take it out after 2 minutes , wash the surface of the substrate with n-hexane, and anneal at 120°C for half an hour;

[0112] In a nitrogen environment, deposit CdSe / ZnS as a quantum dot light-emitting layer on the hole transport layer by ...

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Abstract

The invention discloses a composite film, a quantum dot light-emitting diode and a preparation method thereof. The composite film comprises: a graphene quantum dot film and an alkylsilane, the surface of the graphene quantum dot film has an oxygen-containing group, and the alkane The oxysilane is bonded to the oxygen-containing group. The invention can achieve the purpose of adjusting the work function of the graphene quantum dot film by connecting the alkylsilane on the surface of the graphene quantum dot film, and expand the application range of the graphene quantum dot film as a charge transport material.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting devices, in particular to a composite thin film, a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes and organic light-emitting diodes have shown great application prospects in the display field due to their self-luminescence, fast response speed, high contrast ratio, low power consumption, large viewing angle, and flexibility. In the research of these light-emitting diodes, a variety of high-performance light-emitting materials emerge in an endless stream. Since different light-emitting materials have different energy level structures, in order to give full play to the performance of these light-emitting materials, it is necessary to effectively inject and transport charge carriers. This requires the continuous development of charge transport materials with different energy level structures to match the ener...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/20H10K50/115H10K50/16H10K50/15H10K71/00
Inventor 苏亮谢相伟眭俊田亚蒙黄航
Owner TCL CORPORATION
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