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Processing method and plasma processing apparatus

A plasma and processing method technology, applied in the field of plasma processing devices, can solve the problems of reduction of process characteristics such as etching shape and etching rate, and achieve the effect of preventing the reduction of process characteristics

Pending Publication Date: 2020-07-21
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

) is consumed due to exposure to the plasma
Depletion of the edge ring affects the outcome of the processing applied to the wafer, degrading process characteristics such as etch shape and etch rate

Method used

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  • Processing method and plasma processing apparatus
  • Processing method and plasma processing apparatus
  • Processing method and plasma processing apparatus

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Embodiment Construction

[0018] Hereinafter, modes for implementing the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are attached to the same components, and overlapping descriptions may be omitted.

[0019] [Plasma treatment device]

[0020] refer to figure 1 A plasma processing apparatus 1 according to an embodiment will be described. figure 1 It is a schematic cross-sectional view showing an example of the plasma processing apparatus 1 according to one embodiment. A plasma processing apparatus 1 according to one embodiment is a capacitively coupled parallel-plate processing apparatus and includes a chamber 10 . The chamber 10 is, for example, a cylindrical container made of aluminum whose surface is anodized, and the chamber 10 is grounded.

[0021] At the bottom of the chamber 10 , a columnar support 14 is arranged via an insulating plate 12 made of ceramics or the like, and a mounting table 16 is provided on the support 14...

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PUM

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Abstract

The invention provides a processing method and a plasma processing apparatus that prevent a decrease in process characteristics with respect to an object to be processed when a voltage is applied to an outer peripheral member. In the processing method, the object to be processed is processed using a plasma processing apparatus. The plasma processing apparatus includes a stage on which the object is placed in a chamber, an outer peripheral member disposed around the stage, and a first power supply configured to apply voltage to the outer peripheral member. The processing method includes: applying voltage from the first power supply to the outer peripheral member; adjusting the process parameter based on the voltage applied to the outer peripheral member, by referring to the information stored in the memory; and performing a plasma process under a process condition including the adjusted process parameter.

Description

technical field [0001] The present disclosure relates to a processing method and a plasma processing apparatus. Background technique [0002] A peripheral member (hereinafter, also referred to as an edge ring) disposed around the wafer is consumed due to exposure to plasma. The consumption of the edge ring affects the result of the processing performed on the wafer, reducing process characteristics such as etch shape and etch rate. Therefore, Patent Document 1 proposes a technique for reducing the influence of the processing result on the etching shape and the like due to the consumption of the edge ring. [0003] prior art literature [0004] patent documents [0005] Patent Document 1: Japanese Patent Laid-Open No. 2007-258417 Contents of the invention [0006] The problem to be solved by the invention [0007] The present disclosure provides a technique capable of preventing degradation of process characteristics on an object to be processed when a voltage is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32183H01L21/67069H01L21/67253H01J2237/3343H01J37/32642H01J37/32174H01J37/32532H01J37/32623H01L21/3065H01J2237/3341H01L21/32136H01L22/00B81C2201/0142H01L22/20
Inventor 及川翔横山政司冈野太一河崎俊一
Owner TOKYO ELECTRON LTD