Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as disappearance and reduction of bonding strength

Pending Publication Date: 2020-07-21
DENSO CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the use of semiconductor devices, the Ni film sometimes generates intermetallic compounds (such as Ni 3 sn 4 ), thus gradually disappearing
In this case, the joint strength between the parts to be joined and the solder decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In one embodiment of the present technology, in the heat treatment step, when the Sn-based solder is solidified, (Cu, Ni) may be formed on the one surface of the first member. 6 sn 5 . When the Sn-based solder is melted in the heat treatment step, Ni is dissolved in the Sn-based solder from one surface of the first member made of the Ni-based metal. Ni dissolves in the Sn-based solder, and when the Sn-based solder solidifies, some Cu atoms are substituted with Ni atoms in the intermetallic compound containing Cu and Sn formed on one surface of the first member. That is, on one surface of the first part, (Cu,Ni) 6 sn 5 . Accordingly, mutual diffusion between Ni atoms constituting one surface of the first member and Sn atoms constituting the Sn-based solder can be suitably suppressed.

[0031] In one embodiment of the present technology, in the heat treatment step, when the Sn-based solder is solidified, Cu may be sequentially generated on the one surface of the seco...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a technique capable of suppressing diffusion of a metal on the surface of a member for a semiconductor device. A method of manufacturing a semiconductor device which includes a plurality of members including a semiconductor element is provided. The method may include: a configuration step of disposing one surface of a first member which is one of the plurality of members and one surface of a second member which is another one of the plurality of members opposite to each other with a tin-based (Sn-based) solder material interposed therebetween, and a thermal treatment step of bonding the first member and the second member by melting and solidifying the Sn-based solder material. At least the one surface of the first member may be constituted of a nickel-based (Ni-based) metal, and at least the one surface of the second member may he constituted of copper (Cu).

Description

technical field [0001] The technology disclosed in this specification relates to a semiconductor device and its manufacturing method. Background technique [0002] In a semiconductor device, for example, between a semiconductor element and a lead frame, two or more components are joined by solder. When two members are joined by solder, a Ni layer is provided on the surfaces of the members to be joined by nickel (Ni) plating or the like for the purpose of improving solderability, for example. However, during the use of semiconductor devices, the Ni film sometimes generates intermetallic compounds (such as Ni 3 sn 4 ), and gradually disappear. In this case, the joining strength between the member to be joined and the solder decreases. [0003] Patent Document 1 discloses a semiconductor device in which a semiconductor element and a member to be joined are joined by solder containing tin (Sn) as a main component. In this method of manufacturing a semiconductor device, a me...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/60H01L23/488C22C13/00
CPCH01L24/32C22C13/00H01L24/83H01L2224/83447H01L2224/83455H01L2224/8381H01L2224/83815H01L2224/32245H01L2224/32503H01L2924/181H01L2224/33181H01L2224/83101H01L24/29H01L24/05H01L2224/04026H01L2224/83097H01L2224/83048H01L2224/05624H01L2224/05138H01L2224/05638H01L2224/05124H01L2224/29111H01L2224/05155H01L2224/05655H01L2924/00012H01L2924/01015H01L2924/013H01L2924/01028H01L2924/00014H01L2924/01014H01L2924/01013H01L2924/014H01L2924/01029H01L2224/83095H01L2924/0105
Inventor 门口卓矢
Owner DENSO CORP