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A kind of miniature light-emitting element and its preparation method

A light-emitting element and miniature technology, applied in the direction of electrical components, semiconductor devices, circuits, etc., to achieve the effect of improving the extraction rate and the extraction rate of light

Active Publication Date: 2021-06-29
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the application of the display screen, the light-emitting angles of the RGB three colors must be similar to ensure that the color tone of each angle of the screen is consistent. , forming different luminous angle characteristics, so that when the RGB group chips are packaged into a display screen, different hues at different angles will appear.

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  • A kind of miniature light-emitting element and its preparation method
  • A kind of miniature light-emitting element and its preparation method
  • A kind of miniature light-emitting element and its preparation method

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Embodiment Construction

[0051] In order to make the content of the present invention clearer, the content of the present invention will be further described below in conjunction with the accompanying drawings. The invention is not limited to this specific example. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0052] like figure 1 As shown, a miniature light-emitting element, including:

[0053] substrate1;

[0054] An epitaxial stack 2 disposed on the surface of the substrate 1, the epitaxial stack 2 includes a first-type semiconductor layer 2-1, an active region 2-2, and a second-type semiconductor layer 2-3 stacked in sequence along a first direction, and A local area of ​​the epitaxial stack 2 is etched to a part of the first type semiconductor layer 2-1 to form a groove 2-4 and a mesa 2-5; the first direction is perpendicular to t...

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Abstract

The invention provides a micro light-emitting element and a preparation method thereof. The epitaxial stack is covered by a first insulating protective layer and part of the surfaces of the mesa and the groove are respectively exposed; a metal interlayer is stacked on the first insulating The protection layer is away from one side surface of the epitaxial stack, and has at least one through hole, the through hole is located above the mesa and is set away from the bare part of the mesa; the second insulating protection layer covers the metal interlayer away from One side surface of the first insulating protection layer fills the through hole of the metal interlayer; the second insulating protection layer exposes the exposed portion of the mesa and the exposed portion of the groove. Through the mutual cooperation of the first insulating protection layer, the metal interlayer and the second insulating protection layer during light reflection, and adjusting the size, shape and arrangement of the through holes of the metal interlayer, it can be controllably adjusted The light-emitting angle of the micro-light-emitting element can improve the light extraction rate.

Description

technical field [0001] The invention relates to the field of light emitting diodes, in particular to a micro light emitting element and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the gradual improvement of LED light efficiency, the application of LED is becoming more and more extensive, and people are paying more and more attention to the development prospect of LED in display screens. LED chip, as the core component of LED lamp, its function is to convert electrical energy into light energy, specifically, it includes epitaxial wafers and N-type electrodes and P-type electrodes respectively arranged on the epitaxial wafers. The epitaxial wafer includes a P-type semiconductor layer, an N-type semiconductor layer, and an active layer between the N-type semiconductor layer and the P-type semiconductor layer. When a current passes through the LED chip, the holes in the P-type semiconductor and The electrons in th...

Claims

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Application Information

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IPC IPC(8): H01L33/10H01L33/38H01L33/00
CPCH01L33/005H01L33/10H01L33/38
Inventor 黄瑄刘英策邬新根周弘毅
Owner XIAMEN CHANGELIGHT CO LTD