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Tungsten bulk polishing method with improved topography

A technique for polishing pads and polishing compositions, applied in the direction of polishing compositions containing abrasives, chemical instruments and methods, and other chemical processes, which can solve the tendency of high EOE phenomena, affect device yield, reduce polishing time and production capacity, etc. question

Active Publication Date: 2020-08-21
CMC材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, changing process parameters is typically undesirable due to the complex operations involved, and possible reduction in throughput due to increased polishing time
Changing process parameters can also lead to loss of uniform polishing characteristics, which can adversely affect device yield
Additionally, Applicants have discovered that tungsten polishing slurries formulated with small colloidal silica results in a high propensity for EOE phenomena in tungsten polishing applications

Method used

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  • Tungsten bulk polishing method with improved topography
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Embodiment approach

[0064] (1) A method of chemically mechanically polishing a substrate presented in embodiment (1), comprising: (i) providing a substrate, wherein the substrate comprises a tungsten layer on the surface of the substrate and a layer of silicon oxide on the surface of the substrate; (ii) providing a polishing pad; (iii) providing a chemical mechanical polishing composition comprising (a) surface-modified colloidal silica particles comprising negatively charged groups on the surface of the particles, wherein the surface-modified The modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about -20 mV to about -70 mV at a pH of about 2, (b) an iron compound, (c) a stabilizer, and (d) an aqueous carrier; (iv) contacting the substrate with the polishing pad and the chemical mechanical polishing composition; and (v) moving the polishing pad and the chemical mechanical polishing composition relative to the substr...

Embodiment 1

[0082] This example demonstrates that, according to an embodiment of the present invention, the use of a chemical mechanical polishing composition comprising surface-modified colloidal silica particles, an iron compound, a stabilizer, and an aqueous vehicle provides improved control over the The effectiveness of polishing the substrate on the tungsten layer and the silicon oxide layer on the substrate surface.

[0083] Eight different polishing compositions (Polishing Compositions 1A-1H), as set forth in Tables 1 and 2, were prepared using one of eight different colloidal silica particles (Particles P1-P8). Colloidal silica particles P1 are comparative colloidal silica particles having an average particle diameter of 68 nm.

[0084] Surface modified colloidal silica particles (P1-P8) were prepared as follows: A reactor (10 L) was filled with deionized water and colloidal silica dispersion to provide 3.5 kg of 10% (w / v) SiO 2 colloidal dispersion. 0.5 g of KOH (45%) solution ...

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Abstract

The invention provides a method of chemically-mechanically polishing a substrate comprising providing a substrate comprising a tungsten layer on a surface of the substrate and a silicon oxide layer ona surface of the substrate, providing a chemical-mechanical polishing composition comprising a tungsten layer and a silicon oxide layer using a chemical-mechanical polishing composition comprising a)surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about -20 mV to about -70 mV at a pH of about 2, b) an iron compound, c) a stabilizing agent, and d) an aqueous carrier, and contacting the substrate with a polishing pad and the chemical mechanical polishing composition to polish the substrate.

Description

Background technique [0001] In the fabrication of integrated circuits and other electronic devices, multiple layers of conductive, semiconductive and dielectric materials are deposited on or removed from the surface of a substrate. As layers of material are sequentially deposited on and removed from the substrate, the uppermost surface of the substrate can become uneven and require planarization. Planarization of a surface or "polishing" of a surface is a process in which material is removed from the surface of a substrate to form a generally uniform planar surface. Planarization can be used to remove undesirable surface topography and surface defects, such as rough surfaces, agglomerated material, lattice damage, scratches, and contaminated layers or materials. Planarization can also be used to form features on a substrate by removing excess deposited material used to fill the features and provide a uniform surface for subsequent processing and metallization levels. [0002...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/321H01L21/304H01L21/3105C09G1/02C09K3/14
CPCC09K3/1436C09G1/02H01L21/3212H01L21/32115H01L21/304H01L21/31051C09K3/1409
Inventor W.J.沃德M.E.卡恩斯崔骥K.龙
Owner CMC材料有限责任公司