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Hexagonal boron nitride film and preparation method thereof

A hexagonal boron nitride and thin-film technology, applied in the field of materials, can solve problems such as difficult macro-synthesis, and achieve the effect of simple and easy operation and large area

Inactive Publication Date: 2020-08-25
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, whether it is CVD or PVD method, it is difficult to carry out macro synthesis

Method used

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  • Hexagonal boron nitride film and preparation method thereof
  • Hexagonal boron nitride film and preparation method thereof
  • Hexagonal boron nitride film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Experimental steps:

[0044] Weigh 0.5 g of sodium tetraborate powder and spread it on a sapphire substrate with a diameter of 50 mm. Under an argon atmosphere of 300 sccm, the temperature was raised to 1000 °C at a rate of 10 °C / min, and then ammonia gas was introduced at a rate of 50 sccm, and the reaction was carried out at 1000 °C for 30 min. After naturally cooling down to room temperature, the product was pumped with a mechanical pump at 800°C for 2 hours (atmospheric pressure 1×10 -1 Pa), that is, a large-area continuous ultra-thin hexagonal boron nitride film can be obtained.

[0045] Result analysis:

[0046] From figure 2 It can be seen that the large area of ​​the hexagonal boron nitride ultra-thin film reaches several square centimeters continuously, and it can be seen from the figure that the hexagonal boron nitride ultra-thin film has very good transparency.

[0047] From image 3 The optical microscope photo of (a) shows the uniformity and continuit...

Embodiment 2

[0054] Experimental steps:

[0055] Weigh 2 g of sodium tetraborate powder and place it in a polycrystalline alumina crucible. Under an argon atmosphere of 1000 sccm, the temperature was raised to 1000 °C at a rate of 20 °C / min, then ammonia gas was introduced at a rate of 0.1 sccm, and the reaction was carried out at 1000 °C for 10 h. After naturally cooling down to room temperature, the anisole solution of PMMA with a mass fraction of 5% is coated on the surface of the hexagonal boron nitride film of the product. After the PMMA is solidified, it is soaked in deionized water, and the PMMA floats in the liquid with the hexagonal boron nitride film. On the surface, use a silicon wafer substrate to remove, wash and dry the PMMA with acetone to obtain a large-area continuous ultra-thin hexagonal boron nitride film.

[0056] Result analysis:

[0057] From Figure 8 A uniform, large-area continuous and flat hexagonal boron nitride ultra-thin film can be seen in the optical micro...

Embodiment 3

[0059] Experimental steps:

[0060] Weigh 2 g of sodium tetraborate powder and place it in a silicon carbide crucible. Under an argon atmosphere of 100 sccm, the temperature was raised to 1000 °C at a rate of 20 °C / min, and then ammonia gas was introduced at a rate of 2000 sccm, and the reaction was carried out at 1000 °C for 10 s. After naturally cooling down to room temperature, the anisole solution of PMMA with a mass fraction of 3% is coated on the surface of the hexagonal boron nitride film of the product. After the PMMA is solidified, it is soaked in deionized water, and the PMMA floats in the liquid with the hexagonal boron nitride film. On the surface, use a silicon wafer substrate to remove, wash and dry the PMMA with acetone to obtain a large-area continuous ultra-thin hexagonal boron nitride film.

[0061] Result analysis:

[0062] From Figure 9 A uniform, large-area continuous and flat hexagonal boron nitride ultra-thin film can be seen in the optical microscop...

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Abstract

The invention provides a method for preparing a hexagonal boron nitride film. The method comprises the following steps of (1) placing a boron source in a substrate; (2) in an inert gas atmosphere, heating the boron source until the boron source is molten; (3) introducing a gas-phase nitrogen source for reaction; and (4) after the reaction is finished, removing the unreacted boron source to obtainthe hexagonal boron nitride film. Meanwhile, the invention also provides the hexagonal boron nitride film prepared by the preparation method. The method for preparing the hexagonal boron nitride filmis simple and easy to operate, and the hexagonal boron nitride film prepared by the preparation method is macroscopically continuous, uniform, large in area and flat.

Description

technical field [0001] The present invention belongs to the field of materials. Specifically, the present invention relates to a hexagonal boron nitride thin film and a preparation method thereof. Background technique [0002] Hexagonal boron nitride (h-BN) is a group III-V compound whose hexagonal phase has a layered structure similar to graphene, known as white graphite. The B and N atoms in the layer are bonded together by covalent bonds, and the structure is stable; the layers are bonded by van der Waals force, and the layers can be opened by means of ultrasonic peeling. Hexagonal boron nitride materials have many excellent physical and chemical properties and are widely used in many fields. Hexagonal boron nitride is very stable in the air and can withstand high temperatures of 2000°C. It can only burn under continuous and intense heating conditions. It can be applied to high-temperature refractory materials and refractory coatings. Hexagonal boron nitride is a typic...

Claims

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Application Information

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IPC IPC(8): C23C16/34C23C16/44
CPCC23C16/342C23C16/44
Inventor 赵昱王浩杨晓霞王文龙白雪冬
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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