Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of plasma chemical vapor deposition equipment

A technology of chemical vapor deposition and plasma, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of slow wear of the lower electrode and the generation of spots, so as to avoid spots, prolong the service life, avoid The effect of cost increases

Active Publication Date: 2022-05-03
YUNGU GUAN TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, as the number of substrates processed by PECVD equipment increases, the lower electrode will slowly wear out during the long-term preparation process, making the local thickness difference of the prepared film appear in the form of spots, that is, defects such as spots occur.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of plasma chemical vapor deposition equipment
  • A kind of plasma chemical vapor deposition equipment
  • A kind of plasma chemical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0020] In addition, in the exemplary embodiments, since the same reference numerals denote the same components with the same structure or the same steps of the same method, if one embodiment is exemplarily described, only the same elements as those already described will be described in other exemplary embodiments. Different structures or methods of the embodiments are described.

[0021] Throughout the specification and claims, when one element ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a plasma chemical vapor deposition equipment. Since there are multiple electrode areas with different wear speeds on the lower electrode, by dividing the insulating layer of the lower electrode into multiple insulating areas, the multiple insulating areas are different from the wear speed. The plurality of electrode regions correspond to and the insulation characteristics of the plurality of insulation regions are different, that is, according to the wear speed of the plurality of electrode regions, the insulation regions with corresponding insulation characteristics are set to minimize the difference in the wear degree of the plurality of electrode regions of the lower electrode, Thereby, the wear consistency of the lower electrode is improved, and defects such as spots caused by excessive local wear are avoided. At the same time, the service life of the lower electrode can be effectively extended, and the cost increase caused by frequent replacement of the lower electrode can be avoided.

Description

technical field [0001] The invention relates to the field of display screen preparation equipment, in particular to a plasma chemical vapor deposition equipment. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD for short) is to use microwave or radio frequency to ionize the gas containing the atoms of the film components to form plasma locally. The plasma chemical activity is very strong and it is easy to react. On the substrate The desired film is deposited. [0003] However, as the number of substrates processed by PECVD equipment increases, the lower electrode will slowly wear out during the long-term preparation process, making the local thickness difference of the prepared film appear in the form of spots, that is, defects such as spots. Contents of the invention [0004] In view of this, the embodiments of the present invention are dedicated to providing a plasma chemical vapor deposition equipment, aiming at solving the above problems....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/511C23C16/509
CPCC23C16/511C23C16/5096
Inventor 闵卿旭
Owner YUNGU GUAN TECH CO LTD