Inverter circuit and method for preventing ARM SHORT phenomenon

Abstract

The invention discloses an inverter circuit for preventing an ARM SHORT phenomenon, and the inverter circuit comprises a half-bridge module which comprises an upper bridge arm, a lower bridge arm, anda clamping circuit disposed between the upper bridge arm and the lower bridge arm. The upper bridge arm comprises a first voltage driving type device and a first diode in anti-parallel connection with the first voltage driving type device. The lower bridge arm comprises a second voltage driving type device and a second diode; the clamping circuit comprises a third diode; the positive electrode ofthe second diode is connected with the second electrode of the second voltage-driven device, and the negative electrode of the second diode is connected with the secondary side of the half-bridge module; the positive electrode of the third diode is connected with the secondary side of the half-bridge module and the second electrode of the first voltage driving type device at the same time. And the negative electrode of the third diode is connected with the third electrode of the second voltage driving type device and is in short circuit with the first electrode of the first voltage driving type device to form a short circuit. According to the inverter circuit provided by the invention, a direct connection phenomenon is avoided in various application circuits.

Description

technical field [0001] The invention relates to the technical field of inverter circuits, in particular to an inverter circuit and method for preventing the ARM SHORT phenomenon. Background technique [0002] Inverter circuits can be used to form various AC power sources, and have been widely used in various fields of industry, generally including half-bridge inverter circuits and full-bridge inverter circuits. [0003] In the process of modularizing high-power active devices, its inverter circuit is composed of various modular devices, including half-bridge circuit modules, full-bridge circuit modules, etc. The most common inverter circuit is to use two IGBT half-bridge modules to form a full bridge. Since the switching mode of the IGBT is controlled by the gate, when the gate-emitter voltage is greater than the turn-on voltage (generally above 5V), the IGBT is turned on; when the gate-emitter voltage is less than the turn-on voltage, or less than 0 , the IGBT turns off. ...

AI Technical Summary

Problems solved by technology

[0005] But in practice, when the upper bridge arm IGBT is turned on, due to some external reasons (such as too long gate lines or interference from other components, etc.), the gate-emitter voltage of the IGBT of the lower bridge arm is greater than Turning on the voltage will cause the lower bridge arms to be turned on at the same time, so that the up-and-down through phenomenon occurs (that is, the current flows directly from the upper bridge arm of a half-bridge module to the lower bridge arm), such as figure 1 (b)

In addition, when commutating, the upper bridge arm is in the process from turning on to turning off, but not completely turned off, while the lower bridge arm is in the process from turning off to turning on, but not fully turned on, if at this time There is some interference, so that the lower bridge arm is turned on when the upper bridge arm is not completely turned off, and the phenomenon of up and down straight-through will occur

The above-mentioned phenomenon is called Arm Short, also known as the phenomenon of straight-through of the upper and lower bridge arms. When this phenomenon is serious, it will inevitably lead to damage to the machine and the product.

[0006] In order to solve this problem, components are usually connected outside the module, but this method is more complicated and will affect the overall circuit design

[0007] In addition, although the current existing circuit design will avoid the ARM short phenomenon as much as possible through design, but according to the different use environments in the electronic system, the higher the power system, the more various interferences will be generated to damage the device. In the semiconductor industry, Rugged Type or Short Rated Type products will be sold and developed, but even this is not perfect

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