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Preparation method of cadmium sulfide layer of copper-indium-gallium-selenium solar cell, solar cell and method for growing cadmium sulfide layer on copper-indium-gallium-selenium layer

A technology of solar cells and copper indium gallium selenide, which is applied in the field of solar cells, can solve problems such as pinholes and battery short circuits, and achieve the effects of avoiding pinholes and improving quality and stability

Inactive Publication Date: 2020-09-01
华夏易能(南京)新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, in the process of preparing the cadmium sulfide film, it is inevitable that ammonia molecules will be adsorbed on the surface of the cadmium sulfide film, which will easily cause pinholes, which may lead to short circuit of the battery.

Method used

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  • Preparation method of cadmium sulfide layer of copper-indium-gallium-selenium solar cell, solar cell and method for growing cadmium sulfide layer on copper-indium-gallium-selenium layer
  • Preparation method of cadmium sulfide layer of copper-indium-gallium-selenium solar cell, solar cell and method for growing cadmium sulfide layer on copper-indium-gallium-selenium layer
  • Preparation method of cadmium sulfide layer of copper-indium-gallium-selenium solar cell, solar cell and method for growing cadmium sulfide layer on copper-indium-gallium-selenium layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The invention provides a method for preparing a cadmium sulfide layer of a copper indium gallium selenide solar cell, the preparation method of the cadmium sulfide layer comprising:

[0055] S1: Soak the substrate 1 preset with the CIGS layer 2 in a potassium tartrate solution, so that at least part of the potassium ions in the potassium tartrate solution diffuse into the CIGS layer 2;

[0056] S2: add cadmium salt and alkali to described potassium tartrate solution, fully mix to obtain mixed solution, contain the complex of tartaric acid and cadmium in described mixed solution;

[0057] S3: heating the mixed solution, so that the cadmium ions in the complex diffuse into the CIGS layer 2, and make the surface of the CIGS layer 2 contain at least part of the cadmium ions; and

[0058] S4: Add thiourea to the mixed solution, fully react, and grow a cadmium sulfide layer 3 on the copper indium gallium selenide layer 2.

[0059] In step S1, potassium tartrate is used to soak...

Embodiment 2

[0088] The invention provides a method for preparing a cadmium sulfide layer of a copper indium gallium selenide solar cell, the preparation method of the cadmium sulfide layer comprising:

[0089] S1: Soak the substrate 1 preset with the CIGS layer 2 in a potassium tartrate solution, so that at least part of the potassium ions in the potassium tartrate solution diffuse into the CIGS layer 2;

[0090] S2: add cadmium salt and alkali to described potassium tartrate solution, fully mix to obtain mixed solution, contain the complex of tartaric acid and cadmium in described mixed solution;

[0091] S3: heating the mixed solution, so that the cadmium ions in the complex diffuse into the CIGS layer 2, and make the surface of the CIGS layer 2 contain at least part of the cadmium ions; and

[0092] S4: Add thiourea to the mixed solution, fully react, and grow a cadmium sulfide layer 3 on the copper indium gallium selenide layer 2.

[0093] In step S1, potassium tartrate is used to so...

Embodiment 3

[0122] The invention provides a method for preparing a cadmium sulfide layer of a copper indium gallium selenide solar cell, the preparation method of the cadmium sulfide layer comprising:

[0123] S1: Soak the substrate 1 preset with the CIGS layer 2 in a potassium tartrate solution, so that at least part of the potassium ions in the potassium tartrate solution diffuse into the CIGS layer 2;

[0124] S2: add cadmium salt and alkali to described potassium tartrate solution, fully mix to obtain mixed solution, contain the complex of tartaric acid and cadmium in described mixed solution;

[0125] S3: heating the mixed solution, so that the cadmium ions in the complex diffuse into the CIGS layer 2, and make the surface of the CIGS layer 2 contain at least part of the cadmium ions; and

[0126] S4: Add thiourea to the mixed solution, fully react, and grow a cadmium sulfide layer 3 on the copper indium gallium selenide layer 2.

[0127] In step S1, potassium tartrate is used to so...

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Abstract

The invention relates to a preparation method of a cadmium sulfide layer of a copper-indium-gallium-selenium solar cell, the solar cell and a method for growing the cadmium sulfide layer on the copper-indium-gallium-selenium layer. The preparation method of the cadmium sulfide layer of the copper-indium-gallium-selenium solar cell comprises the steps of placing a substrate with a preset copper-indium-gallium-selenium layer in a potassium tartrate solution to be soaked so as to diffuse at least part of potassium ions in the potassium tartrate solution into the copper-indium-gallium-selenium layer; adding cadmium salt and alkali into the potassium tartrate solution and fully mixing to obtain a mixed solution, wherein the mixed solution contains a complex of tartaric acid and cadmium; heatingthe mixed solution to diffuse the cadmium ions in the complex into the copper-indium-gallium-selenium layer and enable the surface of the copper-indium-gallium-selenium layer to contain at least partof cadmium ions; and adding thiourea into the mixed solution, fully reacting, and growing the cadmium sulfide layer on the copper-indium-gallium-selenium layer. According to the present invention, the ammonia water in the prior art is replaced with potassium tartrate, so that the quality and stability of the cadmium sulfide layer prepared from potassium tartrate are greatly improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a method for preparing a cadmium sulfide layer of a copper indium gallium selenide solar cell, a solar cell and a method for growing a cadmium sulfide layer on the copper indium gallium selenide layer. Background technique [0002] Copper indium gallium selenide thin-film solar cells have attracted widespread attention due to their high photoelectric conversion efficiency, less material consumption, light weight, and flexibility, and are considered to be the second-generation solar cells with great commercial prospects. Generally speaking, a thin-film solar cell includes a substrate, a back electrode, a copper indium gallium selenide absorber layer, a cadmium sulfide layer, and an upper electrode from bottom to top. The cadmium sulfide layer mainly plays the role of adjusting the lattice matching between the absorbing layer and the window layer, protecting the absorbing layer...

Claims

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Application Information

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IPC IPC(8): H01L31/0392H01L31/0445H01L31/18
CPCH01L31/03923H01L31/03925H01L31/18H01L31/0445Y02E10/541Y02P70/50
Inventor 左悦孙合成
Owner 华夏易能(南京)新能源有限公司
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