Unlock instant, AI-driven research and patent intelligence for your innovation.

Capacitive element and plasma processing device

A capacitive element, liquid technology, applied in the direction of plasma, electrical components, capacitors, etc., can solve the problems of electrostatic capacitance changes, damage reliability, detachment, etc., to prevent electrostatic capacitance changes, suppress electrostatic capacitance changes, and suppress relative dielectric The effect of a change in electrical constant

Active Publication Date: 2020-09-11
NISSIN ELECTRIC CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, if a liquid substance is used as a dielectric, air bubbles may flow into the container constituting the capacitive element, or bubbles may be generated in the container, and the air bubbles may be involved in the vortex generated in the container and cannot escape from the container.
As a result, air bubbles adhere to the electrodes, resulting in changes in capacitance, which impair reliability.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitive element and plasma processing device
  • Capacitive element and plasma processing device
  • Capacitive element and plasma processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Hereinafter, an embodiment of the plasma processing apparatus of the present invention will be described with reference to the drawings.

[0042]

[0043] The plasma processing apparatus 100 of the present embodiment processes the substrate W using the inductively coupled plasma P. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescent (EL) display, a flexible substrate for a flexible display, or the like. In addition, the processing performed on the substrate W includes, for example, film formation by a plasma chemical vapor deposition (CVD) method, etching, ashing, sputtering, and the like.

[0044] In addition, this plasma processing apparatus 100 is called a plasma CVD apparatus when performing film formation by a plasma CVD method, is called a plasma etching apparatus when performing etching, and is called a plasma etching apparatus when performing ashing. A plasma ashin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A capacitive element using a liquid as a dielectric, whereby the capacitance is prevented from changing. The capacitive element is equipped with: a storage container that has an introduction port forintroducing a liquid serving as a dielectric, has an discharge port for discharging the liquid, and is filled with the liquid; and at least one pair of electrodes that are provided in the storage container and face each other, wherein an opening section for exhausting air bubbles in the storage container is formed in an upper wall of the storage container.

Description

technical field [0001] The invention relates to a capacitive element and a plasma processing device including the capacitive element. Background technique [0002] As a capacitive element, as disclosed in Patent Document 1, there is a capacitive element that includes a pair of electrodes and a dielectric interposed between these electrodes, and uses a liquid substance as the dielectric. [0003] However, if a liquid substance is used as a dielectric, air bubbles may flow into or generate air bubbles in the container constituting the capacitive element, and the air bubbles may be caught in vortices generated in the container and cannot escape from the container. Then, the air bubbles adhere to the electrodes to cause a change in capacitance, thereby causing a problem of impairing reliability. [0004] prior art literature [0005] patent documents [0006] Patent Document 1: Japanese Patent Laid-Open No. 2009-272354 Contents of the invention [0007] The problem to be s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G5/06H01G5/013H01G5/08H05H1/46
CPCH01G5/06H05H1/46H01G5/08H01G5/013H01J37/321H01J37/32174H01J37/3244H01G5/0132H01G5/014H01G5/12H05H1/4645H01J2237/002
Inventor 李东伟安东靖典
Owner NISSIN ELECTRIC CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com