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Cleaning method for reaction chamber fittings of SiC chemical vapor deposition equipment

A technology of chemical vapor deposition and reaction chamber, applied in chemical instruments and methods, cleaning methods and utensils, gaseous chemical plating, etc., can solve problems such as impurity pollution, easy damage to the original structure, unsuitable SiC-CVD, etc., to achieve The effect of high removal efficiency, reduced difficulty of drying, and reduced difficulty of fine removal

Active Publication Date: 2020-09-15
DONGGUAN TIANYU SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The accessories show that the deposited silicon carbide heterocrystalline layer has high hardness and stable chemical properties, and it cannot be removed by a single cleaning method. The removal process is easy to damage the original structure, and it is easy to introduce impurity pollution, etc.
The traditional in-situ cleaning methods of some CVD equipment reaction chamber accessories are not suitable for SiC-CVD, such as the cleaning methods mentioned in CN 102615068A and CN 106835063A patents

Method used

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  • Cleaning method for reaction chamber fittings of SiC chemical vapor deposition equipment
  • Cleaning method for reaction chamber fittings of SiC chemical vapor deposition equipment
  • Cleaning method for reaction chamber fittings of SiC chemical vapor deposition equipment

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 1 and figure 2 The two chemical vapor deposition reaction chambers shown include a cover plate 1, a side wall 2 and a top plate 3. The cover plate 1 is placed on the bottom and is provided with a wafer placement groove 4; the side wall 2 is used as the side wall of the cover plate 1, both can be as figure 1 What is shown is an integrally formed extension part as the cover plate 1, which can also be used as figure 2 Shown as a separate component; the top plate 3 is arranged above the cover plate 1 as a part that covers the cover plate 1 . The cleaning method of the present invention is mainly aimed at the cleaning of components such as the cover plate 1, the side wall 2, and the top plate 3. It is characterized in that it can be disassembled and can be cleaned in situ, and has better cleaning technology scalability.

[0034] A method for cleaning reaction chamber accessories of SiC chemical vapor deposition equipment, comprising the following steps: ...

Embodiment 2

[0050] A method for cleaning reaction chamber accessories of SiC chemical vapor deposition equipment, comprising the following steps:

[0051] (1) Mechanical friction: remove the deposits on the surface of the accessories by mechanical friction;

[0052] (2) Dust removal: clean the particles on the surface of the accessories;

[0053] (3) Ultrasonic cleaning: Soak the accessories in the cleaning solution for ultrasonic cleaning, and then dry;

[0054] (4) High-temperature purification: place the accessories in a high-temperature furnace and pass gas into it for purification. Control the pressure of the high-temperature furnace to 300 mbar, and the temperature to 1700 ° C for 30 minutes. In the gas passed in, H 2 The flow rate is 50 slm, and the HCl flow rate is 1000 sccm.

[0055] Wherein, in the step (1) of mechanical friction, an abrasive tool is used to rub the inner surface of the accessory, and the abrasive tool is a diamond file.

[0056] Wherein, in the step (1) mech...

Embodiment 3

[0065] A method for cleaning reaction chamber accessories of SiC chemical vapor deposition equipment, comprising the following steps:

[0066] (1) Mechanical friction: remove the deposits on the surface of the accessories by mechanical friction;

[0067] (2) Dust removal: clean the particles on the surface of the accessories;

[0068] (3) Ultrasonic cleaning: Soak the accessories in the cleaning solution for ultrasonic cleaning, and then dry;

[0069] (4) High-temperature purification: place the accessories in a high-temperature furnace and pass in gas for purification. Control the pressure of the high-temperature furnace to 50 mbar, and the temperature to 1300 ° C for 240 minutes. In the gas passed in, H 2 The flow rate is 30 slm and the HCl flow rate is 100 sccm.

[0070] Wherein, in the step (1) mechanical friction, an abrasive tool is used to rub the inner surface of the accessory, and the abrasive tool is a diamond electric grinding head.

[0071] Wherein, in the step ...

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Abstract

The invention relates to the technical field of SiC chemical vapor deposition, and in particular relates to a cleaning method for reaction chamber fittings of SiC chemical vapor deposition equipment.The cleaning method comprises the following steps of (1) mechanical friction; (2) dust removal; (3) ultrasonic cleaning; and (4) high temperature purification: putting the fittings in a high temperature furnace and introducing gas for purification, and controlling the air pressure of the high temperature furnace to 50-300mbar at 1300-1700 DEG C for 30-240min, wherein in the introduced gas, H2 flowis 30-50slm, and HCl flow is 100-1000sccm. The cleaning method firstly removes obvious sediments on the surfaces of the fittings by means of mechanical friction, dust removal and ultrasonic cleaning,and then purifies the fittings by using hydrochloric gas and high temperature conditions to remove sediment impurities. The cleaning process does not damage the original coating, the surfaces of thecleaned fittings are also relatively smooth, and the requirements of continued use of the fittings are met.

Description

technical field [0001] The invention relates to the technical field of SiC chemical vapor deposition, in particular to a method for cleaning reaction chamber accessories of SiC chemical vapor deposition equipment. Background technique [0002] As one of the representatives of wide bandgap semiconductor materials, silicon carbide (SiC) has the advantages of large bandgap, high breakdown electric field, high thermal conductivity, high electron saturation drift speed, and strong radiation resistance. It is a new generation of power Key materials for electronic devices and circuits. SiC epitaxial wafer manufacturing is an indispensable part in the process of SiC from single crystal material to device fabrication. At present, SiC epitaxial wafers are mainly obtained by chemical vapor deposition. [0003] SiC chemical vapor deposition equipment (SiC-CVD for short), the reaction gas is passed into the reaction chamber through the CVD inlet device, and the reaction conditions such...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/32B08B7/04
CPCC23C16/4407C23C16/4405C23C16/325B08B7/04
Inventor 梁土钦孔令沂韩景瑞杨旭腾周泽成李锡光邹雄辉
Owner DONGGUAN TIANYU SEMICON TECH