Isolation structure applied to current sensor and current sensor

Abstract

The invention discloses an isolation structure applied to a current sensor and the current sensor. The isolation structure sequentially comprises a current conductor layer, an insulating dielectric layer and a magnetic field induction circuit layer from bottom to top, wherein the insulating dielectric layer comprises a first bonding layer bonded to the current conductor layer, a second bonding layer bonded to the magnetic field induction circuit layer, and an enhanced insulating safety isolation layer arranged between the first bonding layer and the second bonding layer. According to the invention, the insulating dielectric layer in the isolation structure is replaced, so that the insulating dielectric layer can provide strong supporting force while meeting the requirement of safety isolation performance.

Description

technical field [0001] The invention belongs to the field of microelectronic machinery manufacturing, and in particular relates to an isolation structure applied to a current sensor and the current sensor. Background technique [0002] The current sensor is a detection device that can sense the information of the measured current, and can convert the information sensed by the detection into an electrical signal that meets certain standards or other required forms of information output according to certain rules, so as to meet the Information transmission, processing, storage, display, recording and control requirements. [0003] Such as figure 1 As shown, the existing current sensor structure includes: a metal frame 1, an isolation structure 2 electrically connected to the metal frame 1, and a Hall sensor 3 that is arranged directly above the isolation structure and has a magnetic induction function; the metal frame 1 usually Use bare copper as the base metal material. ...

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Problems solved by technology

[0005] However, affected by technical limitations, the isolation performance of the isolation structure of the prior art, such as withstand voltage and surge, depends on the quality and number of layers of the polyimide film of the insulating dielectric layer; namely: in order to ensure isolation Performance, the thickness of the insulating dielectric layer needs to reach a certain thickness

[0006] like figure 2 As shown, the insulating medium layer of the prior art uses a double-layer adhesive tape structure, which will cause the current sensor to bear excessive stress during the temperature change process, causing the magnetic induction circuit to warp, and then causing the magnetic field induction circuit to be damaged during use. The sensitivity shift of the current sensor affects the performance of the

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